STE88N65M5

Mfr. #: STE88N65M5
Өндіруші: STMicroelectronics
Сипаттама: IGBT Transistors MOSFET POWER MOSFET
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STE88N65M5 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STE88N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1 oz SMD/SMT Mounting-Style ISOTOP-4 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 494 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 29 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 88 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 204 nC. This product operates in Enhancement channel mode for optimal performance.

STE88N65M5 Image

STE88N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STE88N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Unit-Weight 1 oz
  • Mounting-Style SMD/SMT
  • Package-Case ISOTOP-4
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Pd-Power-Dissipation 494 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 29 ns
  • Rise-Time 16 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 88 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 24 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 204 nC
  • Channel-Mode Enhancement

STE88N65M5

STE88N65M5 Specifications

STE88N65M5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M5.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 1 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed ISOTOP-4

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 494 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 29 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 16 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 88 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 24 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 204 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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