STD840DN40

Mfr. #: STD840DN40
Өндіруші: STMicroelectronics
Сипаттама: Bipolar Transistors - BJT Dual NPN High Volt 400V Vceo 700V Vcbo
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STD840DN40 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD840DN40 Overview

Product belongs to the 500V to 1000V Transistors series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 8 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1V @ 400mA, 2A Power-off control: 3 W Maximum operating temperature of + 150 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1 V The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 8.

STD840DN40 Image

STD840DN40

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD840DN40 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Arrays
  • Series 500V to 1000V Transistors
  • Packaging Tube
  • Unit-Weight 0.080001 oz
  • Mounting-Style Through Hole
  • Package-Case 8-DIP (0.300", 7.62mm)
  • Mounting-Type Through Hole
  • Supplier-Device-Package 8-DIP
  • Configuration Dual
  • Power-Max 3W
  • Transistor-Type 2 NPN (Dual)
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 400V
  • DC-Current-Gain-hFE-Min-Ic-Vce 8 @ 2A, 5V
  • Vce-Saturation-Max-Ib-Ic 1V @ 400mA, 2A
  • Current-Collector-Cutoff-Max 250μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 3 W
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 400 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1 V
  • Collector-Base-Voltage-VCBO 700 V
  • Emitter-Base-Voltage-VEBO 9 V to 18 V
  • Maximum-DC-Collector-Current 8 A
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 8

STD840DN40

STD840DN40 Specifications

STD840DN40 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is 500V to 1000V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.080001 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 8-DIP (0.300", 7.62mm).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 8-DIP.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 2 NPN (Dual).

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 4A

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 400V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 8 @ 2A, 5V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 1V @ 400mA, 2A.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 3 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 400 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 1 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 700 V

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 9 V to 18 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 8 A

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 4 A

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 8.

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Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,24 $
0,24 $
10
0,23 $
2,31 $
100
0,22 $
21,87 $
500
0,21 $
103,30 $
1000
0,19 $
194,40 $
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