STB35N60DM2

STB35N60DM2 Overview

Weight of 0.079014 oz SMD/SMT Mounting-Style D2PAK-3 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Power-off control: 210 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 10.7 ns of 16 ns. This product has a 17 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 28 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 110 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 68 ns This product has a 21.2 ns. Qg-Gate-Charge is 54 nC. This product operates in Enhancement channel mode for optimal performance.

STB35N60DM2 Image

STB35N60DM2 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Unit-Weight 0.079014 oz
• Mounting-Style SMD/SMT
• Package-Case D2PAK-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration 1 N-Channel
• Pd-Power-Dissipation 210 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 10.7 ns
• Rise-Time 17 ns
• Vgs-Gate-Source-Voltage +/- 25 V
• Id-Continuous-Drain-Current 28 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 110 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 68 ns
• Typical-Turn-On-Delay-Time 21.2 ns
• Qg-Gate-Charge 54 nC
• Channel-Mode Enhancement

STB35N60DM2 FAQ

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.079014 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is D2PAK-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed 1 N-Channel

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 210 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 10.7 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 17 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is +/- 25 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 28 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 110 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 68 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 21.2 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 54 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement