STB32NM50N

STB32NM50N Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 190 W This product has a 23.6 ns of 16 ns. This product has a 9.5 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 22 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 130 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 110 ns This product has a 21.5 ns. Qg-Gate-Charge is 62.5 nC.

STB32NM50N Image

STB32NM50N Specifications

• Manufacturer STB32NM50N STMICROELECTRONICS
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Reel
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 190 W
• Fall-Time 23.6 ns
• Rise-Time 9.5 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 22 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 130 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 110 ns
• Typical-Turn-On-Delay-Time 21.5 ns
• Qg-Gate-Charge 62.5 nC

STB32NM50N FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel MDmesh

• A: At what frequency does the Packaging?

  Q: The product Packaging is Reel.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.139332 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-252-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 190 W.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 23.6 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 9.5 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 22 A

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 130 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 110 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 21.5 ns

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 62.5 nC.