STB13NK60ZT4

Mfr. #: STB13NK60ZT4
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N-CH 600V 13A D2PAK
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STB13NK60ZT4 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB13NK60ZT4 Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 150 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 14 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 550 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 61 ns This product has a 22 ns. Qg-Gate-Charge is 66 nC. This product features a 11 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STB13NK60ZT4 Image

STB13NK60ZT4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB13NK60ZT4 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 150 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 12 ns
  • Rise-Time 14 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 13 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 550 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 61 ns
  • Typical-Turn-On-Delay-Time 22 ns
  • Qg-Gate-Charge 66 nC
  • Forward-Transconductance-Min 11 S
  • Channel-Mode Enhancement

STB13NK60ZT4

STB13NK60ZT4 Specifications

STB13NK60ZT4 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-252-3

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 150 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 12 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 14 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 13 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 550 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 61 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 22 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 66 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 11 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,14 $
1,14 $
10
1,08 $
10,78 $
100
1,02 $
102,16 $
500
0,96 $
482,40 $
1000
0,91 $
908,00 $
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