SD57120

Mfr. #: SD57120
Өндіруші: STMicroelectronics
Сипаттама: RF MOSFET Transistors N-Ch 65 Volt 14 Amp
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: SD57120 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
SD57120 Overview

Product belongs to the SD57120 series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style M252 Si is the technology used. The device offers a 14 dB at 960 MHz of 26dB. Power-off control: 236 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 3 S of 500 S for high performance.

SD57120 Image

SD57120

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SD57120 Specifications
  • Manufacturer ST
  • Product Category Module
  • Series SD57120
  • Type RF Power MOSFET
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case M252
  • Technology Si
  • Gain 14 dB at 960 MHz
  • Output-Power 120 W
  • Pd-Power-Dissipation 236 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 14 A
  • Vds-Drain-Source-Breakdown-Voltage 65 V
  • Transistor-Polarity N-Channel
  • Forward-Transconductance-Min 3 S

SD57120

SD57120 Specifications

SD57120 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is SD57120.

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed RF Power MOSFET

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed M252

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Gain?

    Q: The product Gain is 14 dB at 960 MHz.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 236 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 1 GHz

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is +/- 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 14 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 3 S

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