PD55035S-E

Mfr. #: PD55035S-E
Өндіруші: STMicroelectronics
Сипаттама: RF MOSFET Transistors POWER RF Transisto
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: PD55035S-E Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PD55035S-E Overview

Product belongs to the PD55035-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Straight Lead) Si is the technology used. The device offers a 16.9 dB at 500 MHz of 26dB. Power-off control: 95 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. The transistor polarity is N-Channel. This product features a 2.5 S of 500 S for high performance.

PD55035S-E Image

PD55035S-E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD55035S-E Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series PD55035-E
  • Type RF Power MOSFET
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case PowerSO-10RF (Straight Lead)
  • Technology Si
  • Gain 16.9 dB at 500 MHz
  • Output-Power 35 W
  • Pd-Power-Dissipation 95 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 7 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Transistor-Polarity N-Channel
  • Forward-Transconductance-Min 2.5 S

PD55035S-E

PD55035S-E Specifications

PD55035S-E FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is PD55035-E.

  • A: At what frequency does the Type?

    Q: The product Type is RF Power MOSFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerSO-10RF (Straight Lead)

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Gain of the product?

    Q: The Gain of the product is 16.9 dB at 500 MHz.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 95 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 1 GHz

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is +/- 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 7 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 40 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 2.5 S.

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