| Mfr. #: | PD54003-E |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | RF MOSFET Transistors RF POWER transistor LDMOST family N-Chan |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | PD54003-E Деректер тізімі |


Product belongs to the PD54003-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 12 dB at 500 MHz of 26dB. Power-off control: 52.8 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. The transistor polarity is N-Channel.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD54003-E Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed PD54003-E
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is PowerSO-10RF (Formed Lead).
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Gain of the product?
Q: The Gain of the product is 12 dB at 500 MHz.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 52.8 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 65 C.
A: At what frequency does the Operating-Frequency?
Q: The product Operating-Frequency is 1 GHz.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 4 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 25 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.