MJE3055T

Mfr. #: MJE3055T
Өндіруші: STMicroelectronics
Сипаттама: TRANS NPN 60V 10A TO220AB
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: MJE3055T Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJE3055T Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN Maximum current collector Ic is 10A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 20 @ 4A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 8V @ 3.3A, 10A Power-off control: 75 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.1 V The 70 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 10 A Gain-Bandwidth-Product: 2 MHz This product is capable of handling a 10 A continuous collector current. Minimum hfe for DC collector-base gain is 20. 70 of 605.

MJE3055T Image

MJE3055T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE3055T Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • Power-Max 75W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 10A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 20 @ 4A, 4V
  • Vce-Saturation-Max-Ib-Ic 8V @ 3.3A, 10A
  • Current-Collector-Cutoff-Max 700μA
  • Frequency-Transition 2MHz
  • Pd-Power-Dissipation 75 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1.1 V
  • Collector-Base-Voltage-VCBO 70 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 10 A
  • Gain-Bandwidth-Product-fT 2 MHz
  • Continuous-Collector-Current 10 A
  • DC-Collector-Base-Gain-hfe-Min 20
  • DC-Current-Gain-hFE-Max 70

MJE3055T

MJE3055T Specifications

MJE3055T FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.211644 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-220AB.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 10A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 60V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 20 @ 4A, 4V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 8V @ 3.3A, 10A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 75 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 60 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 1.1 V.

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 70 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 10 A.

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 2 MHz.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 10 A.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 20

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 70

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Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,40 $
0,40 $
10
0,38 $
3,85 $
100
0,36 $
36,44 $
500
0,34 $
172,05 $
1000
0,32 $
323,90 $
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