| Mfr. #: | MJD122-1 |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | Darlington Transistors NPN PWR Darlington Int Anti Collecto |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | MJD122-1 Деректер тізімі |
Product belongs to the MJD122 series. Bulk is the packaging method for this product Through Hole Mounting-Style TO-251-3 Short Leads, IPak, TO-251AA Through Hole mounting type Supplier device package: TO-251-3 Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 8A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 4A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 4V @ 80mA, 8A Power-off control: 20 W Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 5 A Minimum hfe for DC collector-base gain is 100. 10 uA Maximum Collector Cut-off Current;
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MJD122-1 Specifications
A: At what frequency does the Series?
Q: The product Series is MJD122.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Bulk
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-251-3 Short Leads, IPak, TO-251AA
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-251-3.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN - Darlington.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 8A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 100V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 1000 @ 4A, 4V.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 4V @ 80mA, 8A
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 20 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 100 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 100 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 5 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 100.
A: At what frequency does the Maximum-Collector-Cut-off-Current?
Q: The product Maximum-Collector-Cut-off-Current is 10 uA.