MJD112T4

Mfr. #: MJD112T4
Өндіруші: STMicroelectronics
Сипаттама: Darlington Transistors NPN Power Darlington
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: MJD112T4 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJD112T4 Overview

Product belongs to the MJD112T4 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 2A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 3V @ 40mA, 4A Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Minimum hfe for DC collector-base gain is 200. 20 uA Maximum Collector Cut-off Current;

MJD112T4 Image

MJD112T4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD112T4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series MJD112T4
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.063493 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting-Type Surface Mount
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • Power-Max 20W
  • Transistor-Type NPN - Darlington
  • Current-Collector-Ic-Max 2A
  • Voltage-Collector-Emitter-Breakdown-Max 100V
  • DC-Current-Gain-hFE-Min-Ic-Vce 1000 @ 2A, 3V
  • Vce-Saturation-Max-Ib-Ic 3V @ 40mA, 4A
  • Current-Collector-Cutoff-Max 20μA
  • Frequency-Transition 25MHz
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 100 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 100 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 2 A
  • DC-Collector-Base-Gain-hfe-Min 200
  • Maximum-Collector-Cut-off-Current 20 uA

MJD112T4

MJD112T4 Specifications

MJD112T4 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MJD112T4

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.063493 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed D-Pak

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN - Darlington

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 2A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 100V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 1000 @ 2A, 3V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 3V @ 40mA, 4A.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 100 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 100 V.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 5 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 2 A

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 200.

  • A: At what frequency does the Maximum-Collector-Cut-off-Current?

    Q: The product Maximum-Collector-Cut-off-Current is 20 uA.

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1
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0,22 $
10
0,21 $
2,08 $
100
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19,74 $
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93,20 $
1000
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175,40 $
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