| Mfr. #: | CSD87335Q3D |
|---|---|
| Өндіруші: | Texas Instruments |
| Сипаттама: | MOSFET N-CH 30V POWERBLOCK |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | CSD87335Q3D Деректер тізімі |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerLDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-LSON (3.3x3.3) Configuration 2 N-Channel This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 1050pF @ 15V value of 300pF @ 25V. This product's Standard. - continuous drain-ID current at 25°C; This product has an - of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4 ns 5 ns of 16 ns. This product has a 29 ns 27 ns of 16 ns. This product's 10 V 10 V. The ID of continuous drain current is 25 A 25 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 1 V 750 mV Vgs-th gate-source threshold voltage for efficient power management. The 2.4 Ohms 1.2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns 17 ns This product has a 8 ns 8 ns. Qg-Gate-Charge is 5.7 nC 10.7 nC. This product features a 59 S 107 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD87335Q3D Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-PowerLDFN.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 2 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-LSON (3.3x3.3)
A: At what frequency does the Configuration?
Q: The product Configuration is 2 N-Channel.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual) Asymmetrical
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 N-Channel.
A: At what frequency does the Drain-to-Source-Voltage-Vdss?
Q: The product Drain-to-Source-Voltage-Vdss is 30V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1050pF @ 15V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed -
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is -.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 6 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 4 ns 5 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 29 ns 27 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 10 V 10 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 25 A 25 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V 30 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1 V 750 mV.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 2.4 Ohms 1.2 Ohms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 13 ns 17 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 8 ns 8 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 5.7 nC 10.7 nC
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 59 S 107 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement