| Mfr. #: | CSD87334Q3D |
|---|---|
| Өндіруші: | Texas Instruments |
| Сипаттама: | MOSFET 2N-CH 30V 20A 8SON |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | CSD87334Q3D Деректер тізімі |
Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Dual This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 1260pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an 6 mOhm @ 12A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 17 ns 17 ns of 16 ns. This product has a 7 ns 7 ns of 16 ns. This product's 8 V 8 V. The ID of continuous drain current is 20 A 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 750 mV 750 mV Vgs-th gate-source threshold voltage for efficient power management. The 8.3 mOhms 8.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns 11 ns This product has a 4 ns 4 ns. Qg-Gate-Charge is 750 mV 6.4 nC 6.4 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD87334Q3D Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tape & Reel (TR) Alternate Packaging.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.002677 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed 8-PowerTDFN
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 8-VSON (3.3x3.3).
A: At what frequency does the Configuration?
Q: The product Configuration is Dual.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual) Asymmetrical
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 1260pF @ 15V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Logic Level Gate.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 20A.
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 6 mOhm @ 12A, 8V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 6 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 17 ns 17 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 7 ns 7 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 8 V 8 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 20 A 20 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V 30 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 750 mV 750 mV
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.3 mOhms 8.3 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11 ns 11 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 4 ns 4 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 750 mV 6.4 nC 6.4 nC
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.