CSD25481F4

Mfr. #: CSD25481F4
Өндіруші: Texas Instruments
Сипаттама: MOSFET P-CH 20V 2.5A 3PICOSTAR
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: CSD25481F4 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25481F4 Overview

Product belongs to the CSD25481F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. PicoStar-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.7 ns of 16 ns. This product has a 3.6 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 950 mV Vgs-th gate-source threshold voltage for efficient power management. The 105 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 16.9 ns This product has a 4.1 ns. Qg-Gate-Charge is 0.913 nC. This product features a 3.3 S of 500 S for high performance.

CSD25481F4 Image

CSD25481F4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25481F4 Specifications
  • Manufacturer TI
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25481F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case PicoStar-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.7 ns
  • Rise-Time 3.6 ns
  • Vgs-Gate-Source-Voltage - 12 V
  • Id-Continuous-Drain-Current - 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 950 mV
  • Rds-On-Drain-Source-Resistance 105 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 16.9 ns
  • Typical-Turn-On-Delay-Time 4.1 ns
  • Qg-Gate-Charge 0.913 nC
  • Forward-Transconductance-Min 3.3 S

CSD25481F4

CSD25481F4 Specifications

CSD25481F4 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD25481F4

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is PicoStar-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single Channel

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 6.7 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 3.6 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is - 12 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is - 2.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed - 20 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 950 mV.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 105 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 16.9 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 4.1 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 0.913 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 3.3 S

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