| Mfr. #: | CSD23381F4 |
|---|---|
| Өндіруші: | Texas Instruments |
| Сипаттама: | MOSFET P-CH 12V 3PICOSTAR |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | CSD23381F4 Деректер тізімі |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single Channel This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 12V This product has an 236pF @ 6V value of 300pF @ 25V. This product's Standard. 2.3A (Ta) continuous drain-ID current at 25°C; This product has an 175 mOhm @ 500mA, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 7 ns of 16 ns. This product has a 3.9 ns of 16 ns. This product's - 8 V. The ID of continuous drain current is - 2.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 12 V. This product has a - 950 mV Vgs-th gate-source threshold voltage for efficient power management. The 175 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 18 ns This product has a 4.5 ns. Qg-Gate-Charge is 1.14 nC. This product features a 2 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD23381F4 Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 3-XFDFN.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 3-PICOSTAR.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single Channel
A: What is the FET-Type of the product?
Q: The FET-Type of the product is MOSFET P-Channel, Metal Oxide.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 P-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 12V
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 236pF @ 6V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 2.3A (Ta).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 175 mOhm @ 500mA, 4.5V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 500 mW.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 7 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 3.9 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed - 8 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is - 2.3 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is - 12 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed - 950 mV
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 175 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed P-Channel
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 18 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 4.5 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 1.14 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 2 S.