CSD19531KCS

Mfr. #: CSD19531KCS
Өндіруші: Texas Instruments
Сипаттама: MOSFET N-CH 100V 100A TO220-3
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: CSD19531KCS Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19531KCS Overview

Product belongs to the CSD19531KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 179 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 4.1 ns of 16 ns. This product has a 7.2 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 105 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.7 V Vgs-th gate-source threshold voltage for efficient power management. The 7.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 16 ns This product has a 8.4 ns. Qg-Gate-Charge is 38 nC. This product operates in Enhancement channel mode for optimal performance.

CSD19531KCS Image

CSD19531KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19531KCS Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series CSD19531KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 179 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4.1 ns
  • Rise-Time 7.2 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 105 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.7 V
  • Rds-On-Drain-Source-Resistance 7.7 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 16 ns
  • Typical-Turn-On-Delay-Time 8.4 ns
  • Qg-Gate-Charge 38 nC
  • Channel-Mode Enhancement

CSD19531KCS

CSD19531KCS Specifications

CSD19531KCS FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD19531KCS

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.211644 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 179 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 4.1 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 7.2 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 105 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.7 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 7.7 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 16 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8.4 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 38 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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