CSD19531

Mfr. #: CSD19531
Өндіруші: Texas Instruments
Сипаттама:
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: CSD19531 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19531 Overview

Product belongs to the CSD19531KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 179 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 4.1 ns of 16 ns. This product has a 7.2 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 105 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.7 V Vgs-th gate-source threshold voltage for efficient power management. The 7.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 16 ns This product has a 8.4 ns. Qg-Gate-Charge is 38 nC. This product operates in Enhancement channel mode for optimal performance.

CSD19531 Image

CSD19531

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19531 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series CSD19531KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 179 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4.1 ns
  • Rise-Time 7.2 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 105 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.7 V
  • Rds-On-Drain-Source-Resistance 7.7 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 16 ns
  • Typical-Turn-On-Delay-Time 8.4 ns
  • Qg-Gate-Charge 38 nC
  • Channel-Mode Enhancement

CSD19531

CSD19531 Specifications

CSD19531 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD19531KCS.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.211644 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 179 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 4.1 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 7.2 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 105 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.7 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 7.7 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 16 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 8.4 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 38 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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