CSD18533KCS

Mfr. #: CSD18533KCS
Өндіруші: Texas Instruments
Сипаттама: MOSFET N-CH 60V 100A TO220-3
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: CSD18533KCS Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18533KCS Overview

Product belongs to the CSD18533KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 160 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.2 ns of 16 ns. This product has a 4.8 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 114 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The 9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 5.7 ns. Qg-Gate-Charge is 28 nC. This product features a 150 S of 500 S for high performance.

CSD18533KCS Image

CSD18533KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18533KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18533KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 160 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.2 ns
  • Rise-Time 4.8 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 114 A
  • Vds-Drain-Source-Breakdown-Voltage 60 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Rds-On-Drain-Source-Resistance 9 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 5.7 ns
  • Qg-Gate-Charge 28 nC
  • Forward-Transconductance-Min 150 S

CSD18533KCS

CSD18533KCS Specifications

CSD18533KCS FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD18533KCS.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.211644 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 160 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 3.2 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 4.8 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 114 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.9 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 9 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 13 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 5.7 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 28 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 150 S.

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Қосымша. Бағасы
1
0,87 $
0,87 $
10
0,83 $
8,26 $
100
0,78 $
78,30 $
500
0,74 $
369,75 $
1000
0,70 $
696,00 $
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