CSD18503KCS

Mfr. #: CSD18503KCS
Өндіруші: Texas Instruments
Сипаттама: MOSFET N-CH 40V 100A TO220-3
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: CSD18503KCS Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18503KCS Overview

Product belongs to the CSD18503KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 143 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.8 ns of 16 ns. This product has a 5.3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 130 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The 6.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14 ns This product has a 5.7 ns. Qg-Gate-Charge is 30 nC. This product features a 98 S of 500 S for high performance.

CSD18503KCS Image

CSD18503KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18503KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18503KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 143 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.8 ns
  • Rise-Time 5.3 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 130 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Rds-On-Drain-Source-Resistance 6.8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 14 ns
  • Typical-Turn-On-Delay-Time 5.7 ns
  • Qg-Gate-Charge 30 nC
  • Forward-Transconductance-Min 98 S

CSD18503KCS

CSD18503KCS Specifications

CSD18503KCS FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD18503KCS.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.211644 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 143 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 6.8 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 5.3 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 130 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 40 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.9 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 6.8 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 14 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 5.7 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 30 nC

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 98 S

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1
0,87 $
0,87 $
10
0,83 $
8,26 $
100
0,78 $
78,30 $
500
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1000
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