CSD13202Q2

Mfr. #: CSD13202Q2
Өндіруші: Texas Instruments
Сипаттама: MOSFET N-CH 12V 76A 6SON
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: CSD13202Q2 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD13202Q2 Overview

Product belongs to the CSD13202Q2 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. WSON-FET-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 2.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 13.6 ns of 16 ns. This product has a 28 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 14.4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 9.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 4.5 ns. Qg-Gate-Charge is 5.1 nC. This product features a 44 S of 500 S for high performance. This product operates in Depletion channel mode for optimal performance.

CSD13202Q2 Image

CSD13202Q2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13202Q2 Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD13202Q2
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case WSON-FET-6
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 2.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 13.6 ns
  • Rise-Time 28 ns
  • Vgs-Gate-Source-Voltage 8 V
  • Id-Continuous-Drain-Current 14.4 A
  • Vds-Drain-Source-Breakdown-Voltage 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage 800 mV
  • Rds-On-Drain-Source-Resistance 9.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns
  • Typical-Turn-On-Delay-Time 4.5 ns
  • Qg-Gate-Charge 5.1 nC
  • Forward-Transconductance-Min 44 S
  • Channel-Mode Depletion

CSD13202Q2

CSD13202Q2 Specifications

CSD13202Q2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD13202Q2.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed WSON-FET-6

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 2.7 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 13.6 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 28 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 8 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 14.4 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 800 mV.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 9.3 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 11 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 4.5 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 5.1 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 44 S

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Depletion.

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