| Mfr. #: | CLF1G0060S-10U |
|---|---|
| Өндіруші: | NXP Semiconductors |
| Сипаттама: | RF JFET Transistors Broadband RF power GaN HEMT |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | CLF1G0060S-10U Деректер тізімі |
Tube is the packaging method for this product SMD/SMT Mounting-Style Wide - 65 C to + 150 C operating temperature range for diverse applications SOT1227B GaN Si is the technology used. Configuration Single Transistor type: HEMT The device offers a 14.5 dB of 26dB. Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 3.5 GHz. The ID of continuous drain current is 1.7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 150 V. This product has a - 2 V Vgs-th gate-source threshold voltage for efficient power management. The transistor polarity is N-Channel. This product features a 380 mS of 500 S for high performance. 3 V Vgs-Gate-Source Breakdown Voltage
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CLF1G0060S-10U Specifications
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Operating-Temperature-Range of the product?
Q: The Operating-Temperature-Range of the product is - 65 C to + 150 C.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed SOT1227B
A: What is the Technology of the product?
Q: The Technology of the product is GaN Si.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is HEMT.
A: At what frequency does the Gain?
Q: The product Gain is 14.5 dB.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: Is the cutoff frequency of the product Operating-Frequency?
Q: Yes, the product's Operating-Frequency is indeed 3.5 GHz
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 1.7 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 150 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed - 2 V
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 380 mS
A: At what frequency does the Vgs-Gate-Source-Breakdown-Voltage?
Q: The product Vgs-Gate-Source-Breakdown-Voltage is 3 V.