| Mfr. #: | BUL416T |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | Bipolar Transistors - BJT NPN HI-VOLT FAST SW |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | BUL416T Деректер тізімі |
Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Transistor type: NPN Maximum current collector Ic is 6A . Maximum collector-emitter breakdown voltage of 800V DC current gain minimum (hFE) of Ic/Vce at 18 @ 700mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 1.33A, 4A Power-off control: 110 W Maximum operating temperature of + 150 C Rated VCEO up to 800 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 9 A This product is capable of handling a 6 A continuous collector current. Minimum hfe for DC collector-base gain is 18. 32 of 605.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL416T Specifications
A: What is the Series of the product?
Q: The Series of the product is 1000V Transistors.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.081130 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 6A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 800V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 18 @ 700mA, 5V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 1.5V @ 1.33A, 4A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 800 V
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 9 V
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 9 A.
A: At what frequency does the Continuous-Collector-Current?
Q: The product Continuous-Collector-Current is 6 A.
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 18
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?
Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 32