| Mfr. #: | BD679A |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | Darlington Transistors NPN General Purpose |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | BD679A Деректер тізімі |


Product belongs to the Darlingtons series. Tube is the packaging method for this product Through Hole Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 750 @ 1.5A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 2.5V @ 30mA, 1.5A Power-off control: 40 W Maximum operating temperature of + 150 C Rated VCEO up to 80 V The transistor polarity is NPN. The 80 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 4 A Minimum hfe for DC collector-base gain is 750. 200 uA Maximum Collector Cut-off Current;

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD679A Specifications
A: What is the Series of the product?
Q: The Series of the product is Darlingtons.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-225AA, TO-126-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed SOT-32-3
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN - Darlington
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 4A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 80V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 750 @ 1.5A, 3V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 2.5V @ 30mA, 1.5A.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 40 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 80 V
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 80 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 4 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 750.
A: At what frequency does the Maximum-Collector-Cut-off-Current?
Q: The product Maximum-Collector-Cut-off-Current is 200 uA.