BD139

Mfr. #: BD139
Өндіруші: STMicroelectronics
Сипаттама: TRANS NPN 80V 1.5A TO225AA
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: BD139 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BD139 Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Through Hole Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 1.5A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 40 @ 150mA, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 50mA, 500mA Power-off control: 12.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 80 V The transistor polarity is NPN. Saturation voltage between collector and emitter is - 0.5 V + 0.5 V The 80 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 1.5 A This product is capable of handling a 1.5 A continuous collector current. Minimum hfe for DC collector-base gain is 40. 250 of 605.

BD139 Image

BD139

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD139 Specifications
  • Manufacturer CJ
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-225AA, TO-126-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package SOT-32-3
  • Configuration Single
  • Power-Max 1.25W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 1.5A
  • Voltage-Collector-Emitter-Breakdown-Max 80V
  • DC-Current-Gain-hFE-Min-Ic-Vce 40 @ 150mA, 2V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 50mA, 500mA
  • Current-Collector-Cutoff-Max 100nA (ICBO)
  • Frequency-Transition -
  • Pd-Power-Dissipation 12.5 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 80 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage - 0.5 V + 0.5 V
  • Collector-Base-Voltage-VCBO 80 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 1.5 A
  • Continuous-Collector-Current 1.5 A
  • DC-Collector-Base-Gain-hfe-Min 40
  • DC-Current-Gain-hFE-Max 250

BD139

BD139 Specifications

BD139 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-225AA, TO-126-3.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-32-3.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 1.5A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 80V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 40 @ 150mA, 2V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 500mV @ 50mA, 500mA.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 12.5 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 80 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is - 0.5 V + 0.5 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 80 V

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 1.5 A.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 1.5 A.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 40.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 250.

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