STGWT20IH125DF

STGWT20IH125DF Overview

This product is manufactured by STMicroelectronics. TO-3P package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 1.25 kV. The 2.55 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 40 A 259 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 20 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 300 of 100 IGBTs as subcategory 1. 0.238311 oz of Unit Weight

STGWT20IH125DF Image

STGWT20IH125DF Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-3P
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.25 kV
• Collector-Emitter Saturation Voltage: 2.55 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 40 A
• Pd - Power Dissipation: 259 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGWT20IH125DF
• Packaging: Tube
• Continuous Collector Current Ic Max: 20 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 300
• Subcategory: IGBTs
• Unit Weight: 0.238311 oz

STGWT20IH125DF FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed STMicroelectronics

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-3P.

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed Through Hole

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 1.25 kV

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 2.55 V.

• A: What is the Maximum Gate Emitter Voltage of the product?

  Q: The Maximum Gate Emitter Voltage of the product is 20 V.

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 40 A.

• A: Is the cutoff frequency of the product Pd - Power Dissipation?

  Q: Yes, the product's Pd - Power Dissipation is indeed 259 W

• A: At what frequency does the Minimum Operating Temperature?

  Q: The product Minimum Operating Temperature is - 55 C.

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Continuous Collector Current Ic Max?

  Q: Yes, the product's Continuous Collector Current Ic Max is indeed 20 A

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: Is the cutoff frequency of the product Gate-Emitter Leakage Current?

  Q: Yes, the product's Gate-Emitter Leakage Current is indeed 250 nA

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 300.

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is IGBTs.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0.238311 oz.