STGWA80H65DFB

Mfr. #: STGWA80H65DFB
Өндіруші: STMicroelectronics
Сипаттама: IGBT Transistors IGBT & Power Bipolar
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STGWA80H65DFB Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA80H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 80 A The height of the product is 5.3 mm. 20.3 mm long STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGWA80H65DFB Image

STGWA80H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA80H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 2 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 120 A
  • Pd - Power Dissipation: 469 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA80H65DFB
  • Continuous Collector Current Ic Max: 80 A
  • Height: 5.3 mm
  • Length: 20.3 mm
  • Operating Temperature Range: - 55 C to + 175 C
  • Width: 15.9 mm
  • Brand: STMicroelectronics
  • Continuous Collector Current: 120 A
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs
  • Unit Weight: 1.340411 oz

STGWA80H65DFB

STGWA80H65DFB Specifications

STGWA80H65DFB FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is STMicroelectronics.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-247-3.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is Through Hole.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

    Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

  • A: What is the Collector-Emitter Saturation Voltage of the product?

    Q: The Collector-Emitter Saturation Voltage of the product is 2 V.

  • A: What is the Maximum Gate Emitter Voltage of the product?

    Q: The Maximum Gate Emitter Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

    Q: Yes, the product's Continuous Collector Current at 25 C is indeed 120 A

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 469 W.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 175 C.

  • A: Is the cutoff frequency of the product Continuous Collector Current Ic Max?

    Q: Yes, the product's Continuous Collector Current Ic Max is indeed 80 A

  • A: At what frequency does the Height?

    Q: The product Height is 5.3 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 20.3 mm.

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: What is the Gate-Emitter Leakage Current of the product?

    Q: The Gate-Emitter Leakage Current of the product is 250 nA.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed IGBT Transistors

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 600.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed IGBTs

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 1.340411 oz.

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