| Mfr. #: | STGW60H65DRF |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | IGBT Transistors 60A 650V Field Stop Trench Gate IBGT |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STGW60H65DRF Деректер тізімі |
This product is manufactured by STMicroelectronics. TO-247 package/case type is utilized by this product. The product can operate at a maximum temperature of SMD/SMT. The maximum 650 V. The 1.9 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 360 W Tube packaging for easy dispensing STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.229281 oz of Unit Weight
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STGW60H65DRF Specifications
A: Is the cutoff frequency of the product Manufacturer?
Q: Yes, the product's Manufacturer is indeed STMicroelectronics
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-247.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is SMD/SMT.
A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?
Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V
A: At what frequency does the Collector-Emitter Saturation Voltage?
Q: The product Collector-Emitter Saturation Voltage is 1.9 V.
A: What is the Maximum Gate Emitter Voltage of the product?
Q: The Maximum Gate Emitter Voltage of the product is 20 V.
A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?
Q: Yes, the product's Continuous Collector Current at 25 C is indeed 120 A
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 360 W
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Brand?
Q: The product Brand is STMicroelectronics.
A: What is the Gate-Emitter Leakage Current of the product?
Q: The Gate-Emitter Leakage Current of the product is 250 nA.
A: Is the cutoff frequency of the product Product Type?
Q: Yes, the product's Product Type is indeed IGBT Transistors
A: At what frequency does the Factory Pack Quantity?
Q: The product Factory Pack Quantity is 600.
A: What is the Subcategory of the product?
Q: The Subcategory of the product is IGBTs.
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 0.229281 oz