STGW25M120DF3

STGW25M120DF3 Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 1200 V. The 1.85 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 50 A 326 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGW25M120DF3 Image

STGW25M120DF3 Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1200 V
• Collector-Emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 50 A
• Pd - Power Dissipation: 326 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGW25M120DF3
• Packaging: Tube
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 1.340411 oz

STGW25M120DF3 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed STMicroelectronics

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-247-3.

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is Through Hole.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the Collector- Emitter Voltage VCEO Max of the product?

  Q: The Collector- Emitter Voltage VCEO Max of the product is 1200 V.

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.85 V.

• A: At what frequency does the Maximum Gate Emitter Voltage?

  Q: The product Maximum Gate Emitter Voltage is 20 V.

• A: At what frequency does the Continuous Collector Current at 25 C?

  Q: The product Continuous Collector Current at 25 C is 50 A.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 326 W.

• A: What is the Minimum Operating Temperature of the product?

  Q: The Minimum Operating Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is IGBT Transistors.

• A: At what frequency does the Factory Pack Quantity?

  Q: The product Factory Pack Quantity is 600.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is IGBTs.

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 1.340411 oz.