| Mfr. #: | SCTW90N65G2V |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | SCTW90N65G2V Деректер тізімі |
This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. HIP247-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 650 V 90 A continuous drain current Rds On value of 25 mOhms Gate-Source Threshold Voltage Range: 1.9 V Gate-Source Voltage: 10 V to 22 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 200 C. 390 W This product has a Single configuration. The Channel Mode is set to Enhancement. Tube packaging for easy dispensing The Transistor Type is 1 N-Channel. STMicroelectronics is a trusted brand for quality electronics 16 ns fall time MOSFET product type Rise Time is 38 ns. 600 of 100 MOSFETs as subcategory Turn-off delay time is 58 ns. The typical turn-on delay time is 26 ns.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SCTW90N65G2V Specifications
A: What is the Manufacturer of the product?
Q: The Manufacturer of the product is STMicroelectronics.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed HIP247-3
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 650 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 90 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 25 mOhms.
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 1.9 V.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is 10 V to 22 V.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 200 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 390 W.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: What is the Brand of the product?
Q: The Brand of the product is STMicroelectronics.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 16 ns.
A: Is the cutoff frequency of the product Product Type?
Q: Yes, the product's Product Type is indeed MOSFET
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 38 ns.
A: At what frequency does the Factory Pack Quantity?
Q: The product Factory Pack Quantity is 600.
A: At what frequency does the Subcategory?
Q: The product Subcategory is MOSFETs.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 58 ns
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 26 ns.