| Mfr. #: | MRF101BN |
|---|---|
| Өндіруші: | NXP Semiconductors |
| Сипаттама: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | MRF101BN Деректер тізімі |
This product is manufactured by NXP. 8.8 A continuous drain current Vds rating of 133 V 21.1 dB is 11.5 dB. Output power: 100 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. Tube packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 7.1 S This product is equipped with 1 Channel for efficient performance. 182 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, + 10 V Gate-Source Threshold Voltage Range: 1.7 V This product is also known by the 935377234129 number of 934069005115.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MRF101BN Specifications
A: What is the Manufacturer of the product?
Q: The Manufacturer of the product is NXP.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 8.8 A.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 133 V.
A: What is the Gain of the product?
Q: The Gain of the product is 21.1 dB.
A: At what frequency does the Output Power?
Q: The product Output Power is 100 W.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 40 C.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-220-3.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: At what frequency does the Brand?
Q: The product Brand is NXP Semiconductors.
A: What is the Forward Transconductance - Min of the product?
Q: The Forward Transconductance - Min of the product is 7.1 S.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 182 W.
A: Is the cutoff frequency of the product Product Type?
Q: Yes, the product's Product Type is indeed RF MOSFET Transistors
A: At what frequency does the Factory Pack Quantity?
Q: The product Factory Pack Quantity is 250.
A: At what frequency does the Subcategory?
Q: The product Subcategory is MOSFETs.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is - 6 V, + 10 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.7 V
A: At what frequency does the Part # Aliases?
Q: The product Part # Aliases is 935377234129.