2STR1160

Mfr. #: 2STR1160
Өндіруші: STMicroelectronics
Сипаттама: Bipolar Transistors - BJT Low-Volt Fast Switch NPN Pwr Tran
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: 2STR1160 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2STR1160 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.007090 oz SMD/SMT Mounting-Style TO-236-3, SC-59, SOT-23-3 Surface Mount mounting type Supplier device package: SOT-23-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 1A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 180 @ 500mA, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 430mV @ 100mA, 1A Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. The 60 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 1 A Minimum hfe for DC collector-base gain is 180 at 0.5 A at 2 V 85 at 1 A at 2 V. 180 at 0.5 A at 2 V of 605.

2STR1160 Image

2STR1160

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2STR1160 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.007090 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-236-3, SC-59, SOT-23-3
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-23-3
  • Configuration Single
  • Power-Max 500mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 1A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 180 @ 500mA, 2V
  • Vce-Saturation-Max-Ib-Ic 430mV @ 100mA, 1A
  • Current-Collector-Cutoff-Max 100nA (ICBO)
  • Frequency-Transition -
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 60 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 1 A
  • DC-Collector-Base-Gain-hfe-Min 180 at 0.5 A at 2 V 85 at 1 A at 2 V
  • DC-Current-Gain-hFE-Max 180 at 0.5 A at 2 V

2STR1160

2STR1160 Specifications

2STR1160 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.007090 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-236-3, SC-59, SOT-23-3.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-23-3.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 1A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 60V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 180 @ 500mA, 2V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 430mV @ 100mA, 1A.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 60 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 1 A.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 180 at 0.5 A at 2 V 85 at 1 A at 2 V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 180 at 0.5 A at 2 V

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1
0,18 $
0,18 $
10
0,17 $
1,75 $
100
0,17 $
16,55 $
500
0,16 $
78,15 $
1000
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147,10 $
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