2ST501T

Mfr. #: 2ST501T
Өндіруші: STMicroelectronics
Сипаттама: Darlington Transistors PWR BIP/S.SIGNAL
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: 2ST501T Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2ST501T Overview

Product belongs to the 2ST501 series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 350V DC current gain minimum (hFE) of Ic/Vce at 2000 @ 2A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 2mA, 2A Power-off control: 100 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 350 V The transistor polarity is NPN. 5 V rating of 5 V This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 2000. 500 uA Maximum Collector Cut-off Current;

2ST501T Image

2ST501T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2ST501T Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single, Pre-Biased
  • Series 2ST501
  • Packaging Tube
  • Unit-Weight 0.081130 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • Power-Max 100W
  • Transistor-Type NPN - Darlington
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 350V
  • DC-Current-Gain-hFE-Min-Ic-Vce 2000 @ 2A, 2V
  • Vce-Saturation-Max-Ib-Ic 1.5V @ 2mA, 2A
  • Current-Collector-Cutoff-Max 100μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 100 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 350 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 5 V
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 2000
  • Maximum-Collector-Cut-off-Current 500 uA

2ST501T

2ST501T Specifications

2ST501T FAQ
  • A: At what frequency does the Series?

    Q: The product Series is 2ST501.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.081130 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-220AB.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN - Darlington.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 4A

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 350V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 2000 @ 2A, 2V.

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.5V @ 2mA, 2A

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 100 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 350 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 4 A.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 2000.

  • A: Is the cutoff frequency of the product Maximum-Collector-Cut-off-Current?

    Q: Yes, the product's Maximum-Collector-Cut-off-Current is indeed 500 uA

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