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SI4435DYTRPBF

SI4435DYTRPBF
Mfr. #:
SI4435DYTRPBF
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET P-CH 30V 8A 8-SOIC
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SI4435DYTRPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
INFINEON
Өнім санаты
FETs - жалғыз
Сериялар
HEXFETR
Қаптама
Digi-ReelR балама орамасы
Бірлік-салмағы
0.019048 oz
Монтаждау стилі
SMD/SMT
Пакет-қорап
8-SOIC (0.154", 3.90mm Width)
Технология
Си
Жұмыс температурасы
-55°C ~ 150°C (TJ)
Монтаждау түрі
Беттік орнату
Арналар саны
1 Channel
Жабдықтаушы-құрылғы-пакет
8-SO
Конфигурация
Бір төрттік ағызу үштік көзі
FET түрі
MOSFET P-арнасы, металл оксиді
Қуат – Макс
2.5W
Транзистор түрі
1 P-Channel
Ағызу-көзге-кернеу-Vdss
30V
Кіріс-сыйымдылық-Ciss-Vds
2320pF @ 15V
FET мүмкіндігі
Стандартты
Ағымдағы-Үздіксіз-ағызу-Id-25°C
8A (Tc)
Rds-On-Max-Id-Vgs
20 mOhm @ 8A, 10V
Vgs-th-Max-Id
1V @ 250μA
Gate-Charge-Qg-Vgs
60nC @ 10V
Pd-қуат-диссипация
2.5 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
90 ns
Көтерілу уақыты
76 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
- 8 A
Vds-ағызу-көз-бұзу-кернеу
- 30 V
Rds-On-Drain-Source-Resistance
35 mOhms
Транзистор-полярлық
P-арна
Әдеттегі-өшіру-кідірту уақыты
130 ns
Әдеттегі-қосу-кешігу-уақыты
16 ns
Qg-Gate-Заряд
40 nC
Арна режимі
Жақсарту
Tags
SI4435DYT, SI4435DY, SI4435D, SI4435, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ohm; ID -8A; SO-8; PD 2.5W; VGS +/-20V; -55
***ure Electronics
Single P-Channel 30 V 0.02 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
P CHANNEL MOSFET, 8A; TRANSISTOR POLARIT; P CHANNEL MOSFET, 8A; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
Бөлім № Mfg. Сипаттама Қор Бағасы
SI4435DYTRPBF
DISTI # V72:2272_13891298		Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant		7187
  • 6000:$0.3202
  • 3000:$0.3536
  • 1000:$0.3542
  • 500:$0.4286
  • 250:$0.4731
  • 100:$0.4745
  • 25:$0.5797
  • 10:$0.5822
  • 1:$0.6573
SI4435DYTRPBF
DISTI # SI4435DYPBFCT-ND		Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		38556In Stock
  • 1000:$0.4334
  • 500:$0.5489
  • 100:$0.7078
  • 10:$0.8960
  • 1:$1.0100
SI4435DYTRPBF
DISTI # SI4435DYPBFDKR-ND		Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		38556In Stock
  • 1000:$0.4334
  • 500:$0.5489
  • 100:$0.7078
  • 10:$0.8960
  • 1:$1.0100
SI4435DYTRPBF
DISTI # SI4435DYPBFTR-ND		Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		36000In Stock
  • 4000:$0.3927
SI4435DYTRPBF
DISTI # 30306933		Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant		7187
  • 6000:$0.3202
  • 3000:$0.3536
  • 1000:$0.3542
  • 500:$0.4286
  • 250:$0.4731
  • 100:$0.4745
  • 25:$0.5797
  • 23:$0.5822
SI4435DYTRPBF
DISTI # 30746472		Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.2873
SI4435DYTRPBF
DISTI # SI4435DYTRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SI4435DYTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    SI4435DYTRPBF
    DISTI # SI4435DYTRPBF    		Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4435DYTRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.3609
    • 8000:$0.3479
    • 16000:$0.3349
    • 24000:$0.3239
    • 40000:$0.3179
    SI4435DYTRPBF
    DISTI # SP001573756    		Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SP001573756)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.2949
    • 8000:€0.2409
    • 16000:€0.2209
    • 24000:€0.2039
    • 40000:€0.1899
    SI4435DYTRPBF
    DISTI # 39M3596    		Infineon Technologies AGP CHANNEL MOSFET, 8A,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):35mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes1798
    • 1:$0.8400
    • 25:$0.7140
    • 50:$0.6320
    • 100:$0.5490
    • 250:$0.5170
    • 500:$0.4850
    • 1000:$0.3830
    SI4435DYTRPBF
    DISTI # 31K5362    		Infineon Technologies AGMOSFET Transistor, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):20mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.3400
    • 4000:$0.3400
    SI4435DYTRPBF.
    DISTI # 28AC2139    		Infineon Technologies AGTRENCH_MOSFETS , ROHS COMPLIANT: YES0
    • 1:$0.3400
    • 4000:$0.3400
    SI4435DYTRPBF
    DISTI # 70017416    		Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -8A,SO-8,PD 2.5W,VGS +/-20V,-55
    RoHS: Compliant    		0
    • 4000:$0.3530
    • 8000:$0.3460
    • 20000:$0.3350
    SI4435DYTRPBF
    DISTI # 942-SI4435DYTRPBF    		Infineon Technologies AGMOSFET HEXFET P-CH Low 0.020 Ohm -30V
    RoHS: Compliant    		3619
    • 1:$0.8400
    • 10:$0.7140
    • 100:$0.5490
    • 500:$0.4850
    • 1000:$0.3830
    • 4000:$0.3400
    SI4435DYTRPBFInternational Rectifier 10
    • 6:$0.9000
    SI4435DYTRPBFFairchild Semiconductor Corporation 1913
      SI4435DYTRPBFInternational Rectifier8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-825
      • 6:$0.7200
      • 1:$0.9600
      SI4435DYTRPBFInternational Rectifier8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-88
      • 5:$0.9600
      • 1:$1.2000
      SI4435DYTRPBF
      DISTI # 1702264      		Infineon Technologies AGMOSFET P-CH 30V 8A HEXFET SOIC8, RL7850
      • 4000:£0.2510
      • 8000:£0.2400
      • 12000:£0.2310
      SI4435DYTRPBF
      DISTI # 2577192      		Infineon Technologies AGMOSFET, P-CH, -30V, -8A, SOIC-8
      RoHS: Compliant      		7760
      • 5:£0.5510
      • 25:£0.4720
      • 100:£0.3930
      • 250:£0.3690
      • 500:£0.3440
      SI4435DYTRPBF
      DISTI # 2577235      		Infineon Technologies AG(Alternate Part Number: SP001573756
      RoHS: Compliant      		0
      • 4000:$0.6220
      SI4435DYTRPBF
      DISTI # 2577192      		Infineon Technologies AGMOSFET, P-CH, -30V, -8A, SOIC-8
      RoHS: Compliant      		7676
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8690
      • 500:$0.7680
      • 1000:$0.6060
      • 4000:$0.5380
      SI4435DYTRPBF.
      DISTI # 1374896      		Infineon Technologies AGP CHANNEL MOSFET, 8A
      RoHS: Compliant      		1798
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8690
      • 500:$0.7680
      • 1000:$0.6060
      • 4000:$0.5380
      SI4435DYTRPBF
      DISTI # C1S322000510418      		Infineon Technologies AGMOSFETs7252
      • 250:$0.4731
      • 100:$0.4745
      • 25:$0.5797
      • 10:$0.5823
      SI4435DYTRPBF
      DISTI # C1S322000510427      		Infineon Technologies AGMOSFETs4000
      • 4000:$0.3220
      Сурет Бөлім № Сипаттама
      SI4435DDY-T1-E3

      Mfr.#: SI4435DDY-T1-E3

      OMO.#: OMO-SI4435DDY-T1-E3

      		 MOSFET -30V Vds 20V Vgs SO-8
      SI4435DDY-T1-GE3-CUT TAPE

      Mfr.#: SI4435DDY-T1-GE3-CUT TAPE

      OMO.#: OMO-SI4435DDY-T1-GE3-CUT-TAPE-1190

      		 Жаңа және түпнұсқа
      SI4435BDY

      Mfr.#: SI4435BDY

      OMO.#: OMO-SI4435BDY-1190

      		 Жаңа және түпнұсқа
      SI4435BDY-T1-E3

      Mfr.#: SI4435BDY-T1-E3

      OMO.#: OMO-SI4435BDY-T1-E3-VISHAY

      		 MOSFET P-CH 30V 7A 8-SOIC
      SI4435DY

      Mfr.#: SI4435DY

      OMO.#: OMO-SI4435DY-ON-SEMICONDUCTOR

      		 MOSFET P-CH 30V 8.8A 8-SOIC
      SI4435DY-NL

      Mfr.#: SI4435DY-NL

      OMO.#: OMO-SI4435DY-NL-1190

      		 Жаңа және түпнұсқа
      SI4435DY-REVA

      Mfr.#: SI4435DY-REVA

      OMO.#: OMO-SI4435DY-REVA-1190

      		 MOSFET 30V 8A 2.5W
      SI4435DY-TI

      Mfr.#: SI4435DY-TI

      OMO.#: OMO-SI4435DY-TI-1190

      		 Жаңа және түпнұсқа
      SI4435DYPBF

      Mfr.#: SI4435DYPBF

      OMO.#: OMO-SI4435DYPBF-INFINEON-TECHNOLOGIES

      		 MOSFET P-CH 30V 8A 8-SOIC
      SI4435DYTR

      Mfr.#: SI4435DYTR

      OMO.#: OMO-SI4435DYTR-INFINEON-TECHNOLOGIES

      		 MOSFET P-CH 30V 8A 8-SOIC
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      5000
      Саны енгізіңіз:
      SI4435DYTRPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,31 $
      0,31 $
      10
      0,29 $
      2,93 $
      100
      0,28 $
      27,77 $
      500
      0,26 $
      131,15 $
      1000
      0,25 $
      246,80 $
      -ден бастаңыз
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