BFN19H6327XTSA1

Mfr. #:: BFN19H6327XTSA1
Өндіруші:: Infineon Technologies
Сипаттама:: Bipolar Transistors - BJT AF TRANSISTORS
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: BFN19H6327XTSA1 Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Infineon

Өнім санаты:: Биполярлы транзисторлар - BJT

Пакет/қорап:: SOT-89-4

Қаптама:: Ролик

Бренд:: Infineon Technologies

Өнім түрі:: BJTs - Биполярлы транзисторлар

Зауыттық буманың саны:: 1000

Ішкі санат:: Транзисторлар

Бөлім # Бүркеншік аттар:: 19 BFN H6327 SP001125292

Tags: BFN19H, BFN19, BFN1, BFN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFN19H6327XTSA1 Сипаттама

***ical: Trans GP BJT PNP 300V 0.2A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ronik: PNP TRANSISTOR 300V 0,2A SOT89

***ineon SCT: PNP High Voltage Transistor, SOT89, RoHS

***ure Electronics: FMMT597 Series PNP 0.2 A 300 V SMT Silicon High Voltage Transistor - SOT-23

*** Stop Electro: Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon

***el Electronic: Trans GP BJT PNP 300V 0.2A 500mW Automotive 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): Transistor,PNP,0.2A,300V,SOT23 | Diodes Inc FMMT597TA

***nell: TRANSISTOR, PNP, -300V, -0.2A, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 75MHz; Power Dissipation Pd: 500mW; DC Collector Current: -200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: FMMTA92 Series PNP 0.2 A 300 V SMT Silicon High Voltage Transistor - SOT-23

***nsix Microsemi: Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon

***ical: Trans GP BJT PNP 300V 0.2A 350mW 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): Transistor,PNP,200mA,300V,SOT23 | Diodes Inc FMMTA92TA

***ronik: PNP TRANSISTOR 300V 0,2A SOT23

***ure Electronics: PNP 250 mW 300 V 500 mA Surface Mount Epitaxial Silicon Transistor - SOT-23

*** Source Electronics: Trans GP BJT PNP 300V 0.5A 250mW 3-Pin SOT-23 T/R / TRANS PNP 300V 0.5A SOT23

*** Electronic Components: Bipolar Transistors - BJT PNP Si Transistor Epitaxial

*** Stop Electro: Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon

***ment14 APAC: BIPOLAR TRANSISTOR, PNP, -300V, SOT-23

***enic: SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

***ure Electronics: KSP92 Series 300 V CE Breakdown 0.5 A PNP Epitaxial Silicon Transistor - TO-92

*** Electronic Components: Bipolar Transistors - BJT PNP Si Transistor Epitaxial

***Yang: Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 Ammo - Ammo Pack

***enic: 250nA 300V 625mW 500mA 25@30mA10V 50MHz 500mV@20mA2mA PNP +150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, BIPOL, PNP, -300V, TO-226AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -500mA; DC Current Gain hFE: 25hFE

***ure Electronics: MMBTA92 Series PNP 300 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3

***nsix Microsemi: Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon

***Yang: Trans GP BJT PNP 300V 0.5A 3-Pin SOT-23 T/R - Tape and Reel

***(Formerly Allied Electronics): Transistor PNP 300V 0.5A SOT23 | Diodes Inc MMBTA92-7-F

***nell: TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 300mW; DC Collector Current: -500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): -500mV; Current Ic Continuous a Max: -500mA; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 40; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***Yang: Transistor: PNP, bipolar, -300V, -0.5A, 225mW, -55+150 deg.C, SMD, SOT23

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

***ure Electronics: MMBTA92 Series 300 V CE Breakdown 0.5 A PNP General Purpose Amplifier - SOT-23

*** Electronic Components: Bipolar Transistors - BJT SOT-23 PNP HIGH VOLT

***ical: Trans GP BJT PNP 300V 0.05A 3-Pin SOT-23 T/R

***eco: MMBTA92,@TRANSISTOR,MMBTA92,2D ,SOT-23 PNP SILICON (10)

***fin: Transistor PNP MMBTA92 ON SEMI RoHS milliampere=500 V=300 SOt23

***ment14 APAC: TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:40; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:10mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2D; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:300V

***ure Electronics: FCX558 Series PNP 0.2 A 400 V SMT Silicon High Voltage Transistor - SOT-89

***icontronic: Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon

***ow.cn: Trans GP BJT PNP 400V 0.2A 1000mW 4-Pin(3+Tab) SOT-89 T/R

***(Formerly Allied Electronics): Transistor,PNP,500mA,400V,SOT89 | Diodes Inc FCX558TA

***nell: TRANSISTOR, PNP, 400V, 0.2A, SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-400V; Power Dissipation Pd:1W; DC Collector Current:-200mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

***ure Electronics: DXT3906 Series 40 V 200 mA PNP Surface Mount Transistor - SOT-89

***ical: Trans GP BJT PNP 40V 0.2A 1000mW 4-Pin(3+Tab) SOT-89 T/R

***i-Key: TRANS PNP 40V 0.2A SOT89-3

***des Inc SCT: NPN, 40V, 0.2A, SOT89,300MHz

***ca Corp: Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

*** Source Electronics: Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 80V 1A SOT-89

***ure Electronics: BCX5316 Series 1 A 80 V SMT PNP Silicon Planar Medium Power Transistor - SOT-89

***(Formerly Allied Electronics): Trans GP BJT PNP 80V 1A (3+Tab) SOT89 | Diodes Inc BCX5316TA

***el Electronic: Bipolar Transistors - BJT PNP Medium Power

***ment14 APAC: TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Voltage Vcbo:100V

***et: Trans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) SOT-89 T/R

*** Electronic Components: Bipolar Transistors - BJT PNP/120V/800mA

***inecomponents.com: PNP Epitaxial Silicon Transistor

***-Wing Technology: Tape & Reel (TR) Surface Mount PNP Bipolar (BJT) Transistor 120 @ 100mA 5V 800mA 1W 120MHz

***et: Bipolar Transistors - BJT PNP/120V/800mA

***inecomponents.com: PNP Epitaxial Silicon Transistor

***et: Trans Digital BJT PNP 50V 100mA 3-Pin SOT-416FL T/R

***i-Key: TRANS PREBIAS PNP 50V 0.15W SC89

***nell: DIGITAL TRANSISTOR, -0.1A, SOT-416FL; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 0.22(Ratio); RF Transistor Case: SOT-416FL; No. of Pins: 3 Pin; Product Range: DTA023Y Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
BFN19H6327XTSA1 DISTI # BFN19H6327XTSA1-ND	Infineon Technologies AG	TRANSISTOR AF SOT89-4 RoHS: Compliant Min Qty: 6000 Container: Tape & Reel (TR)	Limited Supply - Call	6000:$0.1390
BFN19H6327XTSA1 DISTI # BFN19H6327XTSA1	Infineon Technologies AG	Trans GP BJT PNP 300V 0.2A 3-Pin SOT-89 T/R - Tape and Reel (Alt: BFN19H6327XTSA1) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.0929 8000:$0.0899 14000:$0.0859 30000:$0.0829 60000:$0.0819
BFN19H6327XTSA1 DISTI # BFN19H6327XTSA1	Infineon Technologies AG	Trans GP BJT PNP 300V 200mA 3-Pin SOT-89 T/R (Alt: BFN19H6327XTSA1) RoHS: Compliant Min Qty: 6000	Americas - 0	6000:$0.0929 8000:$0.0899 14000:$0.0859 30000:$0.0829 60000:$0.0819
BFN19H6327XTSA1 DISTI # SP001125292	Infineon Technologies AG	Trans GP BJT PNP 300V 0.2A 3-Pin SOT-89 T/R (Alt: SP001125292) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.1129 2000:€0.1079 4000:€0.1029 6000:€0.0969 10000:€0.0959
BFN19H6327XTSA1 DISTI # 726-BFN19H6327XTSA1	Infineon Technologies AG	Bipolar Transistors - BJT AF TRANSISTORS	0
BFN19H6327XTSA1	Infineon Technologies AG	Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon RoHS: Compliant	8000	1000:$0.1300 500:$0.1400 25:$0.1500 100:$0.1500 1:$0.1600

Қосымша тауарлар

Сурет

Бөлім №

Сипаттама

Mfr.#: BFN19H6327XTSA1

OMO.#: OMO-BFN19H6327XTSA1

Bipolar Transistors - BJT AF TRANSISTORS

Mfr.#: BFN19H6327

OMO.#: OMO-BFN19H6327-1190

Жаңа және түпнұсқа

Mfr.#: BFN19H6327XTSA1

OMO.#: OMO-BFN19H6327XTSA1-INFINEON-TECHNOLOGIES

Bipolar Transistors - BJT AF TRANSISTORS

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 2000
Саны енгізіңіз:

BFN19H6327XTSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~0,40 $~~; ~~0,40 $~~

10: ~~0,34 $~~; ~~3,39 $~~

100: ~~0,21 $~~; ~~20,70 $~~

2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.

-ден бастаңыз

BFN19H 3
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BFN1 35
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BFN19H6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes