NGTB20N120LWG

Mfr. #:: NGTB20N120LWG
Өндіруші:: ON Semiconductor
Сипаттама:: IGBT Transistors 1200V/20A IGBT FSI TO-247
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: NGTB20N120LWG Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB20N120LWG Datasheet NGTB20N120LWG Datasheet (P4-P6)NGTB20N120LWG Datasheet (P7-P9)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші: ON Жартылай өткізгіш

Өнім санаты: IGBT - жалғыз

Сериялар: NGTB20N120L

Қаптама: Түтік

Бірлік-салмағы: 0.229281 oz

Монтаждау стилі: Тесік арқылы

Пакет-қорап: TO-247-3

Енгізу түрі: Стандартты

Монтаждау түрі: Тесік арқылы

Жабдықтаушы-құрылғы-пакет: TO-247

Қуат – Макс: 192W

Кері-қалпына келтіру-уақыты-trr: -

Ағымдағы коллектор-Ic-Макс: 40A

Кернеу-коллектор-эмиттер-бұзу-макс: 1200V

IGBT түрі: Траншея алаңы аялдамасы

Ток-коллектор-импульстік-Icm: 200A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 20A

Коммутация-энергия: 3.1mJ (on), 700μJ (off)

Gate-Charge: 200nC

Td-on-off-25°C: 86ns/235ns

Сынақ-шарт: 600V, 20A, 10 Ohm, 15V

Pd-қуат-диссипация: 77 W

Коллектор-эмиттер-кернеу-VCEO-Макс: 1200 V

Коллектор-эмиттер-Қанығу-кернеу: 2.2 V

Үздіксіз коллекторлық ток 25-С: 40 A

Шлюз-эмиттер-ағып кету-ток: 100 nA

Максималды-Гейт-Эмитатор-кернеу: 20 V

Tags: NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB20N120LWG Сипаттама

***ical: Trans IGBT Chip N=-CH 1200V 40A 192000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: ON SEMICONDUCTOR - NGTB20N120LWG - IGBT, 1200V, 20A, FS1, TO-247-3

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Ch 1200V 40A FS 1.8V TO247

***nell: IGBT, 1200V, 20A, FS1, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AD Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - Leaded 390pF 100volts C0G LS=5mm +/-5%

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IRG8P25N120 - DISCRETE IGBT WITH

***ark: G8, 1200V, 25A, COPAK-247AD, TUBE

***ical: Trans IGBT Chip N=-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: TrenchStop Series 1200 V 30 A Through Hole IGBT Trench Field Stop - PG-TO247-3-1

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.3pF 25volts C0G +/-0.25pF

***ment14 APAC: IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W

***ineon SCT: Infineon's 1200 V, 15 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N-CH 1200V 30A 229000mW 3-Pin(3+Tab) TO-247 Tube

***-Wing Technology: ON SEMICONDUCTOR - NGTB15N120LWG - IGBT, 1200V, 15A, FS1, TO-247-3

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Ch 1200V 30A FS 1.8V TO247

***S: French Electronic Distributor since 1988

***nell: IGBT, 1200V, 15A, FS1, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ark: Igbt, Single, 1.2Kv, 40A, To-247Ac-3

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IGBT WITH ULTRAFAST SOFT RECOVER

***el Electronic: CAP CER 47PF 100V 5% NP0 RADIAL

***nell: IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No.

***ical: Trans IGBT Chip N-CH 1350V 40A 350000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT, 1350V 20A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel

*** Source Electronics: IGBT with Monolithic Free Wheeling Diode

***i-Key: IGBT TRENCH/FS 1350V 40A TO247

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: TRANSISTOR, IGBT, 2.2V, 40A, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 394W; Collector Emitter Voltage V(br)ceo: 1.35kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C

***ark: Igbt Single Transistor, 50 A, 1.85 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 1200V, 25A, TO247; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
NGTB20N120LWG DISTI # NGTB20N120LWGOS-ND	ON Semiconductor	IGBT 1200V 40A 192W TO247-3 RoHS: Compliant Min Qty: 150 Container: Tube	Limited Supply - Call
NGTB20N120LWG DISTI # 70341216	ON Semiconductor	IGBT N-Ch 1200V 40A FS 1.8V TO247 RoHS: Compliant	0	10:$3.1900 100:$3.0300 250:$2.8800 500:$2.7400
NGTB20N120LWG	ON Semiconductor	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	555	1000:$1.7500 500:$1.8400 100:$1.9200 25:$2.0000 1:$2.1500

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: NGTB20N60L2TF1G OMO.#: OMO-NGTB20N60L2TF1G	IGBT Transistors 600V 20A IGBT TO-3PF
	Mfr.#: NGTB20N120LWG OMO.#: OMO-NGTB20N120LWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A IGBT FSI TO-247
	Mfr.#: NGTB20N120IHLWG OMO.#: OMO-NGTB20N120IHLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A IGBT FSI TO-247
	Mfr.#: NGTB20N120IHRWG OMO.#: OMO-NGTB20N120IHRWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A RC IGBT FSII
	Mfr.#: NGTB20H135IHRWG OMO.#: OMO-NGTB20H135IHRWG-1190	Жаңа және түпнұсқа
	Mfr.#: NGTB20N120 OMO.#: OMO-NGTB20N120-1190	Жаңа және түпнұсқа
	Mfr.#: NGTB20N120IH OMO.#: OMO-NGTB20N120IH-1190	Жаңа және түпнұсқа
	Mfr.#: NGTB20N120IHL OMO.#: OMO-NGTB20N120IHL-1190	Жаңа және түпнұсқа
	Mfr.#: NGTB20N120IHR OMO.#: OMO-NGTB20N120IHR-1190	Жаңа және түпнұсқа
	Mfr.#: NGTB20N120L OMO.#: OMO-NGTB20N120L-1190	Жаңа және түпнұсқа

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 5000
Саны енгізіңіз:

NGTB20N120LWG ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~2,62 $~~; ~~2,62 $~~

10: ~~2,49 $~~; ~~24,94 $~~

100: ~~2,36 $~~; ~~236,25 $~~

500: ~~2,23 $~~; ~~1 115,65 $~~

1000: ~~2,10 $~~; ~~2 100,00 $~~

2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.

-ден бастаңыз

NGTB20N12 12
NGTB20N1 14
NGTB20N 15
NGTB20 16
NGTB2 27
NGTB 131
NGT 181

NGTB20N120LWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes