We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPW65R280E6FKSA1 DISTI # V99:2348_06377602 | Infineon Technologies AG | Trans MOSFET N-CH 700V 13.8A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 240 |
|
| IPW65R280E6FKSA1 DISTI # IPW65R280E6FKSA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 13.8A TO247 RoHS: Compliant Min Qty: 240 Container: Tube | Limited Supply - Call | |
| IPW65R280E6FKSA1 DISTI # 26197272 | Infineon Technologies AG | Trans MOSFET N-CH 700V 13.8A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 240 |
|
| IPW65R280E6 DISTI # SP000795272 | Infineon Technologies AG | Trans MOSFET N-CH 700V 13.8A 3-Pin TO-247 Tube (Alt: SP000795272) RoHS: Compliant Min Qty: 1 Container: Tube | Europe - 200 |
|
| IPW65R280E6 DISTI # 726-IPW65R280E6 | Infineon Technologies AG | MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS E6 RoHS: Compliant | 357 |
|
| IPW65R280E6FKSA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| IPW65R280E6 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant | 290 |
|
| IPW65R280E6FKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant | 716 |
|
| IPW65R280E6 | International Rectifier | Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant | 30 |
|
| IPW65R280E6FKSA1 DISTI # IPW65R280E6FKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,650V,13.8A,104W,PG-TO247-3 | 196 |
|
| IPW65R280E6FKSA1 DISTI # IPW65R280E6 | Infineon Technologies AG | N-Ch 650V 13,8A 104W 0,28R TO247 RoHS: Compliant | 273 |
|
| IPW65R280E6FKSA1 DISTI # C1S322000562703 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 240 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPW65R019C7FKSA1 OMO.#: OMO-IPW65R019C7FKSA1 |
MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 |
|
|
Mfr.#: IPW65R041CFD OMO.#: OMO-IPW65R041CFD |
MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 |
|
|
Mfr.#: IPW65R150CFDFKSA1 OMO.#: OMO-IPW65R150CFDFKSA1 |
MOSFET N-Ch 700V 22.4A TO247-3 |
|
Mfr.#: IPW65R190CFDFKSA2 |
HIGH POWER_LEGACY |
|
|
Mfr.#: IPW65R041CFD OMO.#: OMO-IPW65R041CFD-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPW65R110CFD 65F6110 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPW65R110CFDA OMO.#: OMO-IPW65R110CFDA-1190 |
Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-247 |
|
Mfr.#: IPW65R190C6FKSA1 |
MOSFET N-CH 650V 20.2A TO247 |
|
|
Mfr.#: IPW65R420CFD OMO.#: OMO-IPW65R420CFD-126 |
IGBT Transistors MOSFET N-Ch 650V 8.7A TO247-3 CoolMOS CFD2 |
|
|
Mfr.#: IPW65R310CFD OMO.#: OMO-IPW65R310CFD-126 |
IGBT Transistors MOSFET N-Ch 650V 11.4A TO247-3 CoolMOS CFD2 |
