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STGWT80H65DFB

STGWT80H65DFB
Mfr. #:
STGWT80H65DFB
Өндіруші:
STMicroelectronics
Сипаттама:
IGBT Transistors Trench gate H series 650V 80A HiSpd
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STGWT80H65DFB Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STGWT80H65DFB Көбірек ақпарат STGWT80H65DFB Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-3P
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
650 V
Коллектор-эмиттер қанығу кернеуі:
1.6 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
120 A
Pd - қуаттың шығыны:
469 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Серия:
STGWT80H65DFB
Қаптама:
Түтік
Үздіксіз коллектор ток Ic макс:
80 A
Бренд:
STMicroelectronics
Шлюз-эмиттер ағып кету тогы:
250 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
300
Ішкі санат:
IGBT
Бірлік салмағы:
0.238311 oz
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube
***va Crawler
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
***Components
In a Tube of 30, STMicroelectronics STGWT80H65DFB IGBT
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 80A TO-3P
***nell
IGBT, SINGLE, 650V, 120A, TO-3P
***i-Key
IGBT 650V 120A 469W TO3P-3L
***ark
IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Бөлім № Mfg. Сипаттама Қор Бағасы
STGWT80H65DFB
DISTI # 32924310		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant		300
  • 200:$3.7485
  • 50:$3.9780
  • 10:$4.1182
  • 3:$9.0780
STGWT80H65DFB
DISTI # 497-14234-5-ND		STMicroelectronicsIGBT 650V 120A 469W TO3P-3L
RoHS: Compliant
Min Qty: 1
Container: Tube		8In Stock
  • 510:$4.8825
  • 120:$5.6070
  • 30:$6.4577
  • 10:$6.7730
  • 1:$7.5000
STGWT80H65DFB
DISTI # STGWT80H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGWT80H65DFB
DISTI # STGWT80H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 300
Container: Tube		Americas - 0
  • 3000:$3.7900
  • 1800:$3.8900
  • 1200:$3.9900
  • 600:$4.1900
  • 300:$4.3900
STGWT80H65DFB
DISTI # 45AC7598		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes71
  • 250:$5.1500
  • 100:$5.3900
  • 50:$5.8000
  • 25:$6.2100
  • 10:$6.5100
  • 1:$7.2000
STGWT80H65DFB
DISTI # 511-STGWT80H65DFB		STMicroelectronicsIGBT Transistors Trench gate H series 650V 80A HiSpd
RoHS: Compliant		193
  • 1:$7.1300
  • 10:$6.4500
  • 25:$6.1500
  • 100:$5.3400
  • 250:$5.1000
STGWT80H65DFB
DISTI # 8297136P		STMicroelectronicsIGBT TRENCH HB SERIES 650V 80A TO-3P, TU184
  • 10:£2.9500
STGWT80H65DFB
DISTI # 2807181		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P
RoHS: Compliant		222
  • 1020:$6.4500
  • 510:$7.4100
  • 120:$8.5000
  • 30:$9.7900
  • 1:$11.3700
STGWT80H65DFB
DISTI # 2807181		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P222
  • 100:£3.9100
  • 50:£4.2100
  • 10:£4.5000
  • 5:£5.2200
  • 1:£5.7200
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Қол жетімділік
Қор:
183
Тапсырыс бойынша:
2166
Саны енгізіңіз:
STGWT80H65DFB ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
7,13 $
7,13 $
10
6,45 $
64,50 $
25
6,15 $
153,75 $
100
5,34 $
534,00 $
250
5,10 $
1 275,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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