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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSP129L6906HTSA1 DISTI # BSP129L6906HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 240V 350MA SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP129 L6906 DISTI # 726-BSP129L6906 | Infineon Technologies AG | MOSFET N-Ch 240V 350mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP129L6906 | Infineon Technologies AG | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 16000 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSP129 H6327 OMO.#: OMO-BSP129-H6327 |
MOSFET N-Ch 240V 350mA SOT-223-3 |
|
|
Mfr.#: BSP129 H6906 OMO.#: OMO-BSP129-H6906 |
MOSFET N-Ch 240V 50mA SOT-223-3 |
|
Mfr.#: BSP129 OMO.#: OMO-BSP129-1190 |
DEPLETION MODE MOSFET, 240V, 120mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:120mA, Drain Source Voltage Vds:240V, On Resistance Rds(on):20ohm, Rds(on) Test Voltage Vgs |
|
Mfr.#: BSP129H6327XTSA1 |
MOSFET N-CH 240V 350MA SOT223 |
|
|
Mfr.#: BSP129L6327 OMO.#: OMO-BSP129L6327-1190 |
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP129L6327HTSA1 |
MOSFET N-CH 240V 350MA SOT-223 |
|
|
Mfr.#: BSP129L6906 OMO.#: OMO-BSP129L6906-1190 |
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP129L6906HTSA1 |
MOSFET N-CH 240V 350MA SOT-223 |
|
|
Mfr.#: BSP129E6327T |
MOSFET N-CH 240V 350MA SOT223 |
|
|
Mfr.#: BSP129 L6906 OMO.#: OMO-BSP129-L6906-126 |
IGBT Transistors MOSFET N-Ch 240V 350mA SOT-223-3 |