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IPB048N15N5LFATMA1

IPB048N15N5LFATMA1
Mfr. #:
IPB048N15N5LFATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-CH 150V 120A TO263-3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB048N15N5LFATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB048N15N5LFATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
IPB048N1, IPB048, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 150V 120A TO263-3
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 150V, 120A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 150V, 120A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.0039ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.1V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB048N15N5LFATMA1
DISTI # V72:2272_18205007		Infineon Technologies AGDIFFERENTIATED MOSFETS873
  • 75000:$3.5970
  • 30000:$3.6260
  • 15000:$3.6560
  • 6000:$3.6850
  • 3000:$3.7140
  • 1000:$3.7430
  • 500:$3.7720
  • 250:$3.8010
  • 100:$4.2230
  • 50:$4.6929
  • 25:$5.2140
  • 10:$5.7940
  • 1:$6.9420
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$4.6452
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$5.4934
  • 100:$6.5566
  • 10:$7.9740
  • 1:$8.8600
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$5.4934
  • 100:$6.5566
  • 10:$7.9740
  • 1:$8.8600
IPB048N15N5LFATMA1
DISTI # 32379016		Infineon Technologies AGDIFFERENTIATED MOSFETS873
  • 6000:$3.9614
  • 3000:$3.9926
  • 1000:$4.0237
  • 500:$4.0549
  • 250:$4.0861
  • 100:$4.5397
  • 50:$5.0449
  • 25:$5.6051
  • 10:$6.2286
  • 2:$7.4627
IPB048N15N5LFATMA1
DISTI # IPB048N15N5LFATMA1		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB048N15N5LFATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$4.4900
  • 2000:$4.2900
  • 4000:$4.0900
  • 6000:$3.9900
  • 10000:$3.8900
IPB048N15N5LFATMA1
DISTI # SP001503860		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503860)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€4.1900
  • 2000:€3.9900
  • 4000:€3.8900
  • 6000:€3.5900
  • 10000:€3.3900
IPB048N15N5LFATMA1
DISTI # 93AC7100		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.1V,Power RoHS Compliant: Yes910
  • 500:$3.8700
  • 250:$4.2500
  • 100:$4.4500
  • 50:$4.7900
  • 25:$5.1300
  • 10:$5.3800
  • 1:$5.9500
IPB048N15N5LFATMA1
DISTI # 726-IPB048N15N5LF		Infineon Technologies AGMOSFET
RoHS: Compliant		363
  • 1:$7.4400
  • 10:$6.7200
  • 25:$6.4100
  • 100:$5.5600
  • 250:$5.3100
  • 500:$4.8400
  • 1000:$4.2200
IPB048N15N5LFATMA1
DISTI # 2986458		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263
RoHS: Compliant		898
  • 100:$6.3100
  • 50:$7.0455
  • 25:$8.1801
  • 10:$8.3265
  • 5:$8.9853
  • 1:$9.9552
IPB048N15N5LFATMA1
DISTI # 2986458		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, 313W, TO-263
RoHS: Compliant		898
  • 100:£4.4700
  • 50:£4.8200
  • 10:£5.1700
  • 5:£5.9600
  • 1:£6.4900
Сурет Бөлім № Сипаттама
IPB048N15N5ATMA1

Mfr.#: IPB048N15N5ATMA1

OMO.#: OMO-IPB048N15N5ATMA1

 MOSFET
IPB048N15N5LFATMA1

Mfr.#: IPB048N15N5LFATMA1

OMO.#: OMO-IPB048N15N5LFATMA1

 MOSFET
IPB048N15N5LFATMA1

Mfr.#: IPB048N15N5LFATMA1

OMO.#: OMO-IPB048N15N5LFATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 150V 120A TO263-3
IPB048N15N5ATMA1-CUT TAPE

Mfr.#: IPB048N15N5ATMA1-CUT TAPE

OMO.#: OMO-IPB048N15N5ATMA1-CUT-TAPE-1190

 Жаңа және түпнұсқа
IPB048N15N5ATMA1

Mfr.#: IPB048N15N5ATMA1

OMO.#: OMO-IPB048N15N5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 150V 120A TO263-3
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5000
Саны енгізіңіз:
IPB048N15N5LFATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
5,40 $
5,40 $
10
5,13 $
51,26 $
100
4,86 $
485,60 $
500
4,59 $
2 293,10 $
1000
4,32 $
4 316,40 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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