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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FDB6670AS DISTI # FDB6670AS-ND | ON Semiconductor | MOSFET N-CH 30V 62A TO-263AB RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FDB6670AL DISTI # FDB6670AL-ND | ON Semiconductor | MOSFET N-CH 30V 80A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FDB6670AL DISTI # 512-FDB6670AL | ON Semiconductor | MOSFET N-Channel PowerTrench RoHS: Compliant | 0 | |
| FDB6670S DISTI # 512-FDB6670S | ON Semiconductor | MOSFET | 0 | |
| FDB6670AS DISTI # 512-FDB6670AS | ON Semiconductor | MOSFET 30V N-Channel PT SyncFET RoHS: Compliant | 0 | |
| FDB6670AL_Q DISTI # 512-FDB6670AL_Q | ON Semiconductor | MOSFET N-Channel PowerTrench RoHS: Not compliant | 0 | |
| FDB6670AL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 93875 |
|
| FDB6670AS | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 5998 |
|
| FDB6670S | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 19090 |
|
| FDB6670AL | Fairchild Semiconductor Corporation | MOSFET Transistor, N-Channel, TO-263AB | 10533 |
|
| FDB6670S | Fairchild Semiconductor Corporation | 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 193 |
|
| FDB6670AL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 163 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: FDB33N25TM OMO.#: OMO-FDB33N25TM |
MOSFET 250V N-Ch MOSFET |
|
|
Mfr.#: FDB2532 OMO.#: OMO-FDB2532 |
MOSFET 150V N-Channel QFET Trench |
|
Mfr.#: FDB0105N407L |
MOSFET N-CH 40V 460A |
|
Mfr.#: FDB55N06 OMO.#: OMO-FDB55N06-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: FDB6030BL |
MOSFET N-CH 30V 40A TO-263AB |
|
|
Mfr.#: FDB7051L OMO.#: OMO-FDB7051L-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FDB8443_F085 OMO.#: OMO-FDB8443-F085-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FDB8447 OMO.#: OMO-FDB8447-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FDBL86366 OMO.#: OMO-FDBL86366-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FDB44N25TM-CUT TAPE OMO.#: OMO-FDB44N25TM-CUT-TAPE-1190 |
Жаңа және түпнұсқа |