BLS6G3135-120,112

BLS6G3135-120,112
Mfr. #:
BLS6G3135-120,112
Өндіруші:
Ampleon USA Inc
Сипаттама:
RF MOSFET Transistors LDMOS TNS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BLS6G3135-120,112 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Tags
BLS6G3135-1, BLS6G3, BLS6, BLS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 3.1 to 3.5 GHz, 120 W, 11 dB, 32 V, LDMOS, SOT-502A
***et
Trans MOSFET N-CH 60V 7.2A 3-Pin LDMOST Blister
*** Americas
LDMOS S-Band radar power transistor
***ark
N Channel S-Band Ldmos Transistor, 32V, 3100Mhz - 3500Mhz, 2-Sot-502B; Drain Source Voltage Vds:32V; Continuous Drain Current Id:7.2A; Power Dissipation Pd:120W; Operating Frequency Min:3.1Ghz; Operating Frequency Max:3.5Ghz; Msl:- Rohs Compliant: Yes
Бөлім № Mfg. Сипаттама Қор Бағасы
BLS6G3135-120,112
DISTI # BLS6G3135-120,112-ND
AmpleonRF FET LDMOS 60V 11DB SOT502A
RoHS: Compliant
Min Qty: 20
Container: Tray
Temporarily Out of Stock
  • 20:$328.9970
BLS6G3135-120,112
DISTI # 70R2902
AmpleonN CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 3100MHZ - 3500MHZ, 2-SOT-502B,Drain Source Voltage Vds:32V,Continuous Drain Current Id:7.2A,Power Dissipation Pd:120W,Operating Frequency Min:3.1GHz,Operating Frequency Max:3.5GHz,MSL:- RoHS Compliant: Yes0
    Сурет Бөлім № Сипаттама
    BLS6G3135-120

    Mfr.#: BLS6G3135-120

    OMO.#: OMO-BLS6G3135-120-1152

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    BLS6G3135-120112

    Mfr.#: BLS6G3135-120112

    OMO.#: OMO-BLS6G3135-120112-1190

    Жаңа және түпнұсқа
    BLS6G3135-20

    Mfr.#: BLS6G3135-20

    OMO.#: OMO-BLS6G3135-20-1190

    Жаңа және түпнұсқа
    BLS6G3135-20112

    Mfr.#: BLS6G3135-20112

    OMO.#: OMO-BLS6G3135-20112-1190

    Now Ampleon, BLS6G3135-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
    BLS6G3135S-120112

    Mfr.#: BLS6G3135S-120112

    OMO.#: OMO-BLS6G3135S-120112-1190

    BLS6G3135S-120/SOT502/TRAY
    BLS6G3135S-20

    Mfr.#: BLS6G3135S-20

    OMO.#: OMO-BLS6G3135S-20-1190

    Жаңа және түпнұсқа
    BLS6G3135-120,112

    Mfr.#: BLS6G3135-120,112

    OMO.#: OMO-BLS6G3135-120-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    BLS6G3135S-120,112

    Mfr.#: BLS6G3135S-120,112

    OMO.#: OMO-BLS6G3135S-120-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMSO
    BLS6G3135S-20,112

    Mfr.#: BLS6G3135S-20,112

    OMO.#: OMO-BLS6G3135S-20-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMOS
    BLS6G3135-20,112

    Mfr.#: BLS6G3135-20,112

    OMO.#: OMO-BLS6G3135-20-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    5000
    Саны енгізіңіз:
    BLS6G3135-120,112 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    493,50 $
    493,50 $
    10
    468,82 $
    4 688,21 $
    100
    444,15 $
    44 414,60 $
    500
    419,47 $
    209 735,60 $
    1000
    394,80 $
    394 796,40 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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