IRF6709S2TR1PBF

Mfr. #:: IRF6709S2TR1PBF
Өндіруші:: Infineon / IR
Сипаттама:: MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: IRF6709S2TR1PBF Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6709S2TR1PBF Datasheet IRF6709S2TR1PBF Datasheet (P4-P6)IRF6709S2TR1PBF Datasheet (P7-P9)IRF6709S2TR1PBF Datasheet (P10)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Infineon

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: DirectFET-S1

Арналар саны:: 1 Channel

Транзистордың полярлығы:: N-арна

Vds - ағызу көзінің бұзылу кернеуі:: 25 V

Идентификатор - үздіксіз төгу тогы:: 39 A

Rds On - ағызу көзіне қарсылық:: 13.5 mOhms

Vgs - Шлюз көзі кернеуі:: 20 V

Qg - қақпа заряды:: 8.1 nC

Pd - қуаттың шығыны:: 21 W

Конфигурация:: Бойдақ

Қаптама:: Ролик

Биіктігі:: 0.74 mm

Ұзындығы:: 4.85 mm

Транзистор түрі:: 1 N-Channel

Ені:: 3.95 mm

Бренд:: Infineon / IR

Өнім түрі:: MOSFET

Зауыттық буманың саны:: 1000

Ішкі санат:: MOSFETs

Бөлім # Бүркеншік аттар:: SP001523938

Бірлік салмағы:: 0.003527 oz

Tags: IRF670, IRF67, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6709S2TR1PBF Сипаттама

***et: Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R

***ied Electronics & Automation: MOSFET; 25V; 12.000A; DIRECTFET-LV

***i-Key: MOSFET N-CH 25V 12A DIRECTFET-S1

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; Termination Type:SMD; Alternate Case Style:DirectFET; Max Voltage Vgs th:2.35V; Min Voltage Vgs th:1.35V; Pulse Current Idm:100A; Transistor Case Style:S1

***ment14 APAC: MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
IRF6709S2TR1PBF DISTI # IRF6709S2TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET-S1 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6709S2TR1PBF DISTI # IRF6709S2TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET-S1 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6709S2TR1PBF DISTI # IRF6709S2TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET-S1 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6709S2TR1PBF DISTI # 70019593	Infineon Technologies AG	MOSFET,25V,12.000A,DIRECTFET-LV RoHS: Compliant	0	1000:$1.0400 2000:$1.0190 5000:$0.9880 10000:$0.9460 25000:$0.8840
IRF6709S2TR1PBF DISTI # 942-IRF6709S2TR1PBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC RoHS: Compliant	0
IRF6709S2TR1PBF	International Rectifier		1000
IRF6709S2TR1PBF	International Rectifier	RoHS: Compliant	1000
IRF6709S2TR1PBF DISTI # 1688580	Infineon Technologies AG	MOSFET, N-CH, 25V, DIRECTFETS1 RoHS: Compliant	668	1000:$1.4100 250:$1.5900 100:$1.7800 25:$2.2000 1:$2.6700
IRF6709S2TR1PBF DISTI # 1688580	Infineon Technologies AG	MOSFET, N-CH, 25V, DIRECTFETS1 RoHS: Compliant	668	500:£0.4580 250:£0.4590 100:£0.4600 25:£0.5450 5:£0.5950

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: IRF6709S2TRPBF OMO.#: OMO-IRF6709S2TRPBF	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
	Mfr.#: IRF6709S2TR1PBF OMO.#: OMO-IRF6709S2TR1PBF	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
	Mfr.#: IRF6709S2TR1PBF OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 12A DIRECTFET-S1
	Mfr.#: IRF6709S2TRPBF OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES	MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 4000
Саны енгізіңіз:

IRF6709S2TR1PBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

-ден бастаңыз

IRF670 6
IRF67 80
IRF6 688
IRF 8615

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IRF6709S2TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes