DMC1016UPD-13

Mfr. #:: DMC1016UPD-13
Өндіруші:: Diodes Incorporated
Сипаттама:: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: DMC1016UPD-13 Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
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Өнім атрибуты
Төлсипат мәні

Өндіруші: Біріктірілген диодтар

Өнім санаты: FETs - массивтер

Сериялар: -

Қаптама: Digi-ReelR балама орамасы

Пакет-қорап: 8-PowerTDFN

Жұмыс температурасы: -55°C ~ 150°C (TJ)

Монтаждау түрі: Беттік орнату

Жабдықтаушы-құрылғы-пакет: PowerDI5060-8

FET түрі: N және P-арнасы

Қуат – Макс: 2.3W

Ағызу-көзге-кернеу-Vdss: 12V, 20V

Кіріс-сыйымдылық-Ciss-Vds: 1454pF @ 6V

FET мүмкіндігі: Стандартты

Ағымдағы-Үздіксіз-ағызу-Id-25°C: 9.5A, 8.7A

Rds-On-Max-Id-Vgs: 17 mOhm @ 11.8A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Charge-Qg-Vgs: 32nC @ 8V

Tags: DMC101, DMC10, DMC1, DMC

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Step1:
Vacuum Packaging with PL

Step2:
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DMC1016UPD-13 Сипаттама

***et: Transistor MOSFET Array N-CH/P-CH 12V/20V 13A 8-Pin PowerDI 5060 T/R

***ical: Trans MOSFET N/P-CH 12V/20V 9.5A/8.7A 8-Pin PowerDI EP T/R

***ark: Mosfet, Dual, N/p-Ch, 12V, 9.5A Rohs Compliant: Yes

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, 2.3 W

***et: Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R

***ure Electronics: DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.28 W

***ure Electronics: Dual N-Channel 20 V 28 mOhm 16 nC 0.8 W Silicon Surface Mount Mosfet - UFDFN-6

***et Europe: Transistor MOSFET Array Dual N-CH 20V 9.3A 6-Pin uDFN2030 T/R

*** Source Electronics: MOSFET 2N-CH 20V 9A 6-UDFN / DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

***(Formerly Allied Electronics): MOSFET Dual N-Channel 20V 9A U-DFN2030-6

***ical: Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***et: Trans MOSFET N-CH 20V 9A 6-Pin DFN T/R

***des Inc SCT: N-Channel Mosfet, 20V VDS, 10±V VGS

***i-Key: MOSFET N-CH 20V 9A X1-DFN1616-6

***emi: Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20V, 9.4A, 14.5mΩ

***ure Electronics: Single N-Channel 20 V 1.9 W 17.5 nC Silicon Surface Mount Mosfet - MICROFET-2x2

***rchild Semiconductor: This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

***emi: 20V Single N-Channel 1.5 V Specified PowerTrench® MOSFET

***et: Trans MOSFET N-CH 20V 9.4A 6-Pin MicroFET T/R

***S: French Electronic Distributor since 1988

***rchild Semiconductor: This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8

***ponent Sense: Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
DMC1016UPD-13 DISTI # V36:1790_16386170	Zetex / Diodes Inc	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET	0	2500000:$0.2424 1250000:$0.2426 250000:$0.2588 25000:$0.2856 2500:$0.2900
DMC1016UPD-13 DISTI # DMC1016UPD-13DICT-ND	Diodes Incorporated	MOSFET 8V 24V POWERDI5060-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1803In Stock	1000:$0.3296 500:$0.4120 100:$0.5212 10:$0.6800 1:$0.7700
DMC1016UPD-13 DISTI # DMC1016UPD-13DIDKR-ND	Diodes Incorporated	MOSFET 8V 24V POWERDI5060-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1803In Stock	1000:$0.3296 500:$0.4120 100:$0.5212 10:$0.6800 1:$0.7700
DMC1016UPD-13 DISTI # DMC1016UPD-13DITR-ND	Diodes Incorporated	MOSFET 8V 24V POWERDI5060-8 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock
DMC1016UPD-13 DISTI # DMC1016UPD-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V PowerDI5060-8 T&R 2.5K (Alt: DMC1016UPD-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Europe - 0	25000:€0.2279 15000:€0.2389 10000:€0.2419 5000:€0.2459 2500:€0.2589
DMC1016UPD-13 DISTI # DMC1016UPD-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V PowerDI5060-8 T&R 2.5K - Tape and Reel (Alt: DMC1016UPD-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2239 15000:$0.2289 10000:$0.2399 5000:$0.2519 2500:$0.2649
DMC1016UPD-13 DISTI # 621-DMC1016UPD-13	Diodes Incorporated	MOSFET MOSFET BVDSS: 8V-24V RoHS: Compliant	2072	1:$0.7400 10:$0.6200 100:$0.4000 1000:$0.3200

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: DMC1017UPD-13 OMO.#: OMO-DMC1017UPD-13	MOSFET Enh FET 12Vdss 8Vgss 20V Complementary
	Mfr.#: DMC1017UPD-13 OMO.#: OMO-DMC1017UPD-13-DIODES	Darlington Transistors MOSFET Enh FET 12Vdss 8Vgss 20V Complementary
	Mfr.#: DMC1015UPD-13 OMO.#: OMO-DMC1015UPD-13-DIODES	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
	Mfr.#: DMC1016UPD-13 OMO.#: OMO-DMC1016UPD-13-DIODES	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
	Mfr.#: DMC1018 OMO.#: OMO-DMC1018-1190	Жаңа және түпнұсқа

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 4000
Саны енгізіңіз:

DMC1016UPD-13 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~0,34 $~~; ~~0,34 $~~

10: ~~0,32 $~~; ~~3,19 $~~

100: ~~0,30 $~~; ~~30,23 $~~

500: ~~0,29 $~~; ~~142,75 $~~

1000: ~~0,27 $~~; ~~268,70 $~~

-ден бастаңыз

DMC101 4
DMC10 16
DMC1 35
DMC 1762

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DMC1016UPD-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes