IPB320N20N3 G

IPB320N20N3 G
Mfr. #:
IPB320N20N3 G
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB320N20N3 G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB320N20N3 G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
34 A
Rds On - ағызу көзіне қарсылық:
28 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
29 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
136 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
4.4 mm
Ұзындығы:
10 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Түрі:
OptiMOS 3 Power-Transistor
Ені:
9.25 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
27 S
Күз уақыты:
4 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
9 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
21 ns
Қосудың әдеттегі кешігу уақыты:
11 ns
Бөлім # Бүркеншік аттар:
IPB320N20N3GATMA1 IPB32N2N3GXT SP000691172
Бірлік салмағы:
0.139332 oz
Tags
IPB320N20N3G, IPB320, IPB32, IPB3, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB320N20N3G
DISTI # 30577587
Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
RoHS: Compliant
98
  • 8:$3.1625
IPB320N20N3G
DISTI # 30580280
Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
RoHS: Compliant
17
  • 9:$2.9625
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.3789
  • 2000:$1.4328
  • 1000:$1.5082
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$1.8420
  • 100:$2.1638
  • 10:$2.6410
  • 1:$2.9400
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$1.8420
  • 100:$2.1638
  • 10:$2.6410
  • 1:$2.9400
IPB320N20N3GATMA1
DISTI # V72:2272_06382940
Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB320N20N3GATMA1
    DISTI # V36:1790_06382940
    Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    0
    • 1000000:$1.1950
    • 500000:$1.1970
    • 100000:$1.3070
    • 10000:$1.4800
    • 1000:$1.5080
    IPB320N20N3GATMA1
    DISTI # IPB320N20N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB320N20N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 4000:$1.2900
    • 6000:$1.2900
    • 10000:$1.2900
    • 1000:$1.3900
    • 2000:$1.3900
    IPB320N20N3GATMA1
    DISTI # SP000691172
    Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R (Alt: SP000691172)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 6000:€1.0900
    • 10000:€1.0900
    • 4000:€1.1900
    • 2000:€1.2900
    • 1000:€1.5900
    IPB320N20N3GATMA1
    DISTI # 47W3467
    Infineon Technologies AGMOSFET, N CHANNEL, 200V, 34A, TO263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$1.7200
    • 100:$2.0200
    • 10:$2.3200
    • 1:$2.7400
    IPB320N20N3 G
    DISTI # 726-IPB320N20N3GXT
    Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    874
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 726-IPB320N20N3GATMA
    Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    962
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 7528344
    Infineon Technologies AGMOSFET N-CHANNEL 200V 34A OPTIMOS3 TO263, EA15
    • 10:£1.5600
    • 1:£2.2200
    IPB320N20N3GATMA1
    DISTI # 2212854
    Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-32
    • 500:£1.3000
    • 250:£1.4500
    • 100:£1.5500
    • 10:£1.7800
    • 1:£2.3600
    IPB320N20N3GATMA1
    DISTI # 2212854
    Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-3
    RoHS: Compliant
    12
    • 1000:$2.1600
    • 500:$2.5600
    • 250:$2.8500
    • 100:$3.0100
    • 10:$3.4700
    • 1:$4.0800
    Сурет Бөлім № Сипаттама
    FAN7171M-F085

    Mfr.#: FAN7171M-F085

    OMO.#: OMO-FAN7171M-F085

    Gate Drivers High Current H-Side Gate Drive IC
    MURA160T3G

    Mfr.#: MURA160T3G

    OMO.#: OMO-MURA160T3G

    Rectifiers 600V 1A UltraFast
    NCS1002DR2G

    Mfr.#: NCS1002DR2G

    OMO.#: OMO-NCS1002DR2G

    Switching Controllers ANA DUAL OP AMP/VOLT REF
    LM1117MPX-5.0/NOPB

    Mfr.#: LM1117MPX-5.0/NOPB

    OMO.#: OMO-LM1117MPX-5-0-NOPB

    LDO Voltage Regulators 800MA LDO LINEAR REG
    MLF2012A4R7KT000

    Mfr.#: MLF2012A4R7KT000

    OMO.#: OMO-MLF2012A4R7KT000

    Fixed Inductors 4.7 UH 10%
    885012106022

    Mfr.#: 885012106022

    OMO.#: OMO-885012106022

    Multilayer Ceramic Capacitors MLCC - SMD/SMT WCAP-CSGP 1uF 0603 20% 25V MLCC
    MLF2012A4R7KT000

    Mfr.#: MLF2012A4R7KT000

    OMO.#: OMO-MLF2012A4R7KT000-TDK

    Fixed Inductors 4.7 UH 10%
    LM1117MPX-5.0/NOPB

    Mfr.#: LM1117MPX-5.0/NOPB

    OMO.#: OMO-LM1117MPX-5-0-NOPB-TEXAS-INSTRUMENTS

    IC REG LINEAR 5V 800MA SOT223-4
    C3225X5R1C156M250AA

    Mfr.#: C3225X5R1C156M250AA

    OMO.#: OMO-C3225X5R1C156M250AA-TDK

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 15uF 20% 16Volts
    MURA160T3G

    Mfr.#: MURA160T3G

    OMO.#: OMO-MURA160T3G-ON-SEMICONDUCTOR

    Rectifiers 600V 1A UltraFast
    Қол жетімділік
    Қор:
    937
    Тапсырыс бойынша:
    2920
    Саны енгізіңіз:
    IPB320N20N3 G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    2,71 $
    2,71 $
    10
    2,30 $
    23,00 $
    100
    2,00 $
    200,00 $
    250
    1,89 $
    472,50 $
    500
    1,70 $
    850,00 $
    -ден бастаңыз
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