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MSC025SMA120J

MSC025SMA120J
Mfr. #:
MSC025SMA120J
Өндіруші:
Microchip / Microsemi
Сипаттама:
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
MSC025SMA120J Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
MSC025SMA120J Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Микрочип
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
SiC
Орнату стилі:
Шасси бекіткіші
Пакет/қорап:
SOT-227-4
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
1.2 kV
Rds On - ағызу көзіне қарсылық:
31 mOhms
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Қаптама:
Түтік
Бренд:
Микрочип / Microsemi
Өнім түрі:
MOSFET
Зауыттық буманың саны:
1
Ішкі санат:
MOSFETs
Tags
MSC025, MSC02, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Бөлім № Mfg. Сипаттама Қор Бағасы
MSC025SMA120J
DISTI # V36:1790_21671870		Microsemi CorporationMSC025SMA120J0
  • 10000:$55.2100
  • 5000:$55.2200
  • 1000:$57.9500
  • 100:$64.8000
  • 10:$66.0800
MSC025SMA120J
DISTI # 691-MSC025SMA120J-ND		Microsemi CorporationGEN2 SIC MOSFET 1200V 25MOHM SOT
Min Qty: 1
Container: Tube		20In Stock
  • 100:$56.5807
  • 25:$61.1236
  • 10:$62.7760
  • 1:$66.0800
MSC025SMA120J
DISTI # MSC025SMA120J		Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 77A SOT-227 - Rail/Tube (Alt: MSC025SMA120J)
RoHS: Compliant
Min Qty: 10
Container: Tube		Americas - 0
  • 100:$51.2900
  • 50:$52.0900
  • 30:$53.7900
  • 20:$55.5900
  • 10:$57.4900
MSC025SMA120J
DISTI # 494-MSC025SMA120J		Microchip Technology IncMOSFET UNRLS, FG, SIC MOSFET, SOT-227
RoHS: Compliant		21
  • 1:$86.0800
  • 2:$83.4900
  • 5:$82.4700
  • 10:$80.8700
  • 25:$78.2500
  • 50:$76.5200
  • 100:$72.4600
MSC025SMA120J
DISTI # MSC025SMA120J		Microsemi CorporationSILICON CARBIDE MOSFETS
RoHS: Compliant		250
  • 1:$63.0500
  • 10:$54.1600
  • 50:$52.7900
  • 100:$52.1300
Сурет Бөлім № Сипаттама
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

 MOSFET SIC MOS 80MW 1200V
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120-STMICROELECTRONICS

 MOSFET N-CH 1.2KV TO247-3
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1-ON-SEMICONDUCTOR

 SIC MOS TO247 80MW 1200V
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
4000
Саны енгізіңіз:
MSC025SMA120J ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
86,08 $
86,08 $
2
83,49 $
166,98 $
5
82,47 $
412,35 $
10
80,87 $
808,70 $
25
78,25 $
1 956,25 $
50
76,52 $
3 826,00 $
100
72,46 $
7 246,00 $
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