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IXTR90P20P

IXTR90P20P
Mfr. #:
IXTR90P20P
Өндіруші:
Littelfuse
Сипаттама:
MOSFET -90.0 Amps -200V 0.048 Rds
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IXTR90P20P Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTR90P20P DatasheetIXTR90P20P Datasheet (P4-P5)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
IXYS
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247-3
Транзистордың полярлығы:
P-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
53 A
Rds On - ағызу көзіне қарсылық:
48 mOhms
Vgs th - Gate-Source шекті кернеуі:
4 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
205 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
312 W
Арна режимі:
Жақсарту
Сауда атауы:
PolarP
Қаптама:
Түтік
Биіктігі:
21.34 mm
Ұзындығы:
16.13 mm
Серия:
IXTR90P20
Түрі:
PolarP Power MOSFET
Ені:
5.21 mm
Бренд:
IXYS
Форвард өткізгіштік - Мин:
30 S
Күз уақыты:
28 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
60 ns
Зауыттық буманың саны:
30
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
89 ns
Қосудың әдеттегі кешігу уақыты:
32 ns
Бірлік салмағы:
0.186952 oz
Tags
IXTR, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET P-CH 200V 53A ISOPLUS247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V
*** Source Electronics
Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 56A TO-220AB
***ure Electronics
Single N-Channel 200 V 40 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 380 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 200V, 56A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:40ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220
*** Source Electronics
MOSFET N-CH 200V 61A TO-220 / Trans MOSFET N-CH 200V 61A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 200 V 41 mO 417 W Flange Mount Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 61A I(D), 200V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-220; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:244A; Repetitive Avalanche Energy Max:41.7mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC
***ure Electronics
Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC
***fin
Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
*** Source Electronics
Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
***ure Electronics
Single N-Channel 200 V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
***ark
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247-3 Polarity: N Variants: Enhancement mode Power dissipation: 300 W
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ure Electronics
N-Channel 200 V 0.045 Ohm Flange Mount STripFET Power MosFet - TO-220
***ical
Trans MOSFET N-CH 200V 40A 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
***ark
MOSFET, N CHANNEL, 200V, 40A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***roFlash
Mosfet Transistor, N Channel, 40 A, 200 V, 0.038 Ohm, 10 V, 3 V Rohs Compliant: Yes
***ure Electronics
N-Channel 200 V 45 mOhm Flange Mount STripFET Power Mosfet - TO-247
***icroelectronics
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
***ark
MOSFET, N CH, 200V, 40A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.038ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Бөлім № Mfg. Сипаттама Қор Бағасы
IXTR90P20P
DISTI # IXTR90P20P-ND		IXYS CorporationMOSFET P-CH 200V 53A ISOPLUS247
RoHS: Compliant
Min Qty: 300
Container: Tube		Temporarily Out of Stock
  • 300:$13.1797
IXTR90P20P
DISTI # 747-IXTR90P20P		IXYS CorporationMOSFET -90.0 Amps -200V 0.048 Rds
RoHS: Compliant		0
  • 1:$19.5600
  • 10:$17.7800
  • 25:$16.4400
  • 50:$15.1300
  • 100:$14.7600
  • 250:$13.5300
  • 500:$12.2800
Сурет Бөлім № Сипаттама
IXTR90P20P

Mfr.#: IXTR90P20P

OMO.#: OMO-IXTR90P20P

 MOSFET -90.0 Amps -200V 0.048 Rds
IXTR90P10P

Mfr.#: IXTR90P10P

OMO.#: OMO-IXTR90P10P

 MOSFET -57.0 Amps -100V 0.270 Rds
IXTR90P20P

Mfr.#: IXTR90P20P

OMO.#: OMO-IXTR90P20P-IXYS-CORPORATION

 Darlington Transistors MOSFET -90.0 Amps -200V 0.048 Rds
IXTR90P10P

Mfr.#: IXTR90P10P

OMO.#: OMO-IXTR90P10P-IXYS-CORPORATION

 MOSFET -57.0 Amps -100V 0.270 Rds
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1500
Саны енгізіңіз:
IXTR90P20P ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
19,56 $
19,56 $
10
17,78 $
177,80 $
25
16,44 $
411,00 $
50
15,13 $
756,50 $
100
14,76 $
1 476,00 $
250
13,53 $
3 382,50 $
500
12,28 $
6 140,00 $
1000
11,21 $
11 210,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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