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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| STD19NE06LT4 DISTI # 511-STD19NE06LT4 | STMicroelectronics | MOSFET RoHS: Compliant | 0 | |
| STD19NE06LT4 | STMicroelectronics | 12500 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: STD19NF06L OMO.#: OMO-STD19NF06L |
MOSFET |
|
Mfr.#: STD19NF20 OMO.#: OMO-STD19NF20 |
MOSFET N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in DPAK package |
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|
Mfr.#: STD19N3LLH6AG OMO.#: OMO-STD19N3LLH6AG |
MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFET H6 Power MOSFET in a DPAK package |
|
Mfr.#: STD19N3LLH6AG |
MOSFET N-CH 30V 10A DPAK |
|
|
Mfr.#: STD19NF06L |
MOSFET N-CH 60V DPAK |
|
|
Mfr.#: STD19NF20 |
MOSFET N-CHANNEL 200V 15A DPAK |
|
|
Mfr.#: STD19NE06L OMO.#: OMO-STD19NE06L-1190 |
Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: STD19NE06L1 OMO.#: OMO-STD19NE06L1-1190 |
Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: STD19NE06LT4 OMO.#: OMO-STD19NE06LT4-1190 |
MOSFET |