We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FMR19N60ES DISTI # FE0000000001047 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR19N60ESSC DISTI # FE0000000004654 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR19N60ESC DISTI # FE0000000004653 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: FMR19N60E OMO.#: OMO-FMR19N60E-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
|
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Mfr.#: FMR19N60E,FMR19N60E-51FR |
Жаңа және түпнұсқа |
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Mfr.#: FMR19N60E-51FR OMO.#: OMO-FMR19N60E-51FR-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FMR19N60ES OMO.#: OMO-FMR19N60ES-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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|
Mfr.#: FMR19N60ES-F236R OMO.#: OMO-FMR19N60ES-F236R-1190 |
Жаңа және түпнұсқа |