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BSZ100N06LS3

BSZ100N06LS3
Mfr. #:
BSZ100N06LS3
Өндіруші:
Infineon Technologies
Сипаттама:
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ100N06LS3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
FETs - жалғыз
Сериялар
OptiMOS
Қаптама
Digi-ReelR балама орамасы
Бөлік бүркеншік аттар
BSZ100N06LS3GATMA1 BSZ100N06LS3GXT SP000453672
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
8-PowerVDFN
Технология
Си
Жұмыс температурасы
-55°C ~ 150°C (TJ)
Монтаждау түрі
Беттік орнату
Арналар саны
1 Channel
Жабдықтаушы-құрылғы-пакет
PG-TSDSON-8 (3.3x3.3)
Конфигурация
Бір төрттік ағызу үштік көзі
FET түрі
MOSFET N-арнасы, металл оксиді
Қуат – Макс
50W
Транзистор түрі
1 N-Channel
Ағызу-көзге-кернеу-Vdss
60V
Кіріс-сыйымдылық-Ciss-Vds
3500pF @ 30V
FET мүмкіндігі
Логикалық деңгей қақпасы
Ағымдағы-Үздіксіз-ағызу-Id-25°C
11A (Ta), 20A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.2V @ 23μA
Gate-Charge-Qg-Vgs
45nC @ 10V
Pd-қуат-диссипация
2.1 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
8 ns
Көтерілу уақыты
58 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
20 A
Vds-ағызу-көз-бұзу-кернеу
60 V
Rds-On-Drain-Source-Resistance
10 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
19 ns
Әдеттегі-қосу-кешігу-уақыты
8 ns
Арна режимі
Жақсарту
Tags
BSZ100N06LS, BSZ100N06L, BSZ100N06, BSZ100, BSZ10, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ100N06LS3GATMA1
DISTI # V72:2272_06384814		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1722
  • 3000:$0.3721
  • 1000:$0.3758
  • 500:$0.4625
  • 250:$0.5169
  • 100:$0.5225
  • 25:$0.6506
  • 10:$0.6584
  • 1:$0.7557
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 5000:$0.4025
BSZ100N06LS3GATMA1
DISTI # 31078933		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		15000
  • 10000:$0.3626
  • 5000:$0.3759
BSZ100N06LS3GATMA1
DISTI # 31338070		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5320
BSZ100N06LS3GATMA1
DISTI # 31066196		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4039
BSZ100N06LS3GATMA1
DISTI # 31433908		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1733
  • 17:$0.7557
BSZ100N06LS3 G
DISTI # 31073348		Infineon Technologies AGBSZ100N06LS3 G
RoHS: Compliant		270
  • 200:$0.5355
  • 100:$0.5534
  • 50:$0.6337
  • 22:$0.9422
BSZ100N06LS3G
DISTI # BSZ100N06LS3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: BSZ100N06LS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.3930
  • 10000:$0.3821
  • 15000:$0.3718
  • 25000:$0.3620
  • 50000:$0.3573
  • 125000:$0.3527
  • 250000:$0.3482
BSZ100N06LS3G
DISTI # SP000453672		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: SP000453672)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.5899
  • 10000:€0.5009
  • 20000:€0.4459
  • 30000:€0.4009
  • 50000:€0.3719
BSZ100N06LS3GXT
DISTI # BSZ100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3939
  • 10000:$0.3929
  • 20000:$0.3919
  • 30000:$0.3909
  • 50000:$0.3899
BSZ100N06LS3GATMA1.
DISTI # 25AC6456		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:50W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3580
  • 10000:$0.3570
  • 20000:$0.3560
  • 30000:$0.3550
BSZ100N06LS3GATMA1
DISTI # 47W3363		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes1800
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
BSZ100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3800
BSZ100N06LS3GATMA1
DISTI # 726-BSZ100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		364
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3 G
DISTI # 726-BSZ100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		347
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3GATMA1
DISTI # 7528255		Infineon Technologies AGMOSFET N-CHANNEL 60V 11A TSDSON8, PK275
  • 5:£0.6420
  • 50:£0.5120
  • 250:£0.3920
  • 1250:£0.2880
  • 2500:£0.2800
BSZ100N06LS3 GInfineon Technologies AG 295
    BSZ100N06LS3 G
    DISTI # C1S322000698008    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		270
    • 200:$0.4200
    • 100:$0.4340
    • 50:$0.4970
    • 10:$0.7390
    • 5:$0.9120
    BSZ100N06LS3GATMA1
    DISTI # C1S322000721254    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		15000
    • 10000:$0.3626
    • 5000:$0.3759
    BSZ100N06LS3GATMA1
    DISTI # C1S322000463253    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		1733
    • 250:$0.5158
    • 100:$0.5214
    • 25:$0.6491
    • 10:$0.6569
    BSZ100N06LS3GATMA1
    DISTI # C1S322000408964    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.4130
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		1800
    • 1:$1.4400
    • 10:$1.2200
    • 100:$0.9370
    • 500:$0.8280
    • 1000:$0.6540
    • 5000:$0.5800
    BSZ100N06LS3 GInfineon Technologies AGRoHS(ship within 1day)240
    • 1:$1.4300
    • 10:$1.0700
    • 50:$0.8900
    • 100:$0.7100
    • 500:$0.6100
    • 1000:$0.5700
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		2850
    • 5:£0.6550
    • 25:£0.5220
    • 100:£0.4570
    • 250:£0.4000
    • 500:£0.3430
    Сурет Бөлім № Сипаттама
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N06NSATMA1

    Mfr.#: BSZ100N06NSATMA1

    OMO.#: OMO-BSZ100N06NSATMA1

    		 MOSFET MV POWER MOS
    BSZ100N03LS G

    Mfr.#: BSZ100N03LS G

    OMO.#: OMO-BSZ100N03LS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
    BSZ100N03

    Mfr.#: BSZ100N03

    OMO.#: OMO-BSZ100N03-1190

    		 Жаңа және түпнұсқа
    BSZ100N03LSG

    Mfr.#: BSZ100N03LSG

    OMO.#: OMO-BSZ100N03LSG-1190

    		 Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G-1190

    		 Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: BSZ100N03MS G)
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 40A TDSON-8
    BSZ100N06LS3GATMA

    Mfr.#: BSZ100N06LS3GATMA

    OMO.#: OMO-BSZ100N06LS3GATMA-1190

    		 Жаңа және түпнұсқа
    BSZ100N03LSGATMA1-CUT TAPE

    Mfr.#: BSZ100N03LSGATMA1-CUT TAPE

    OMO.#: OMO-BSZ100N03LSGATMA1-CUT-TAPE-1190

    		 Жаңа және түпнұсқа
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    5500
    Саны енгізіңіз:
    BSZ100N06LS3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
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    0,00 $
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    100
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    500
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