SI4686DY-T1-E3

SI4686DY-T1-E3
Mfr. #:
SI4686DY-T1-E3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SI4686DY-T1-E3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4686DY-T1-E3 DatasheetSI4686DY-T1-E3 Datasheet (P4-P6)SI4686DY-T1-E3 Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:
SI4686DY-T1-E3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
E
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SO-8
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Биіктігі:
1.75 mm
Ұзындығы:
4.9 mm
Серия:
SI4
Ені:
3.9 mm
Бренд:
Вишай / Силиконикс
Өнім түрі:
MOSFET
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
SI4686DY-E3
Бірлік салмағы:
0.006596 oz
Tags
SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    UA

    Excellent. Recommended.

    2019-04-15
    L***r
    L***r
    UA

    All yak head, super.

    2019-05-20
    O***n
    O***n
    RU

    Ringing as a diode, not igbt, in the work to check until you took a chance.

    2019-04-26
***ure Electronics
Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
SI4686DY-T1-E3
DISTI # V72:2272_09215583
Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
RoHS: Compliant
375
  • 250:$0.8146
  • 100:$0.8235
  • 25:$0.9485
  • 10:$1.0539
  • 1:$1.2997
SI4686DY-T1-E3
DISTI # V36:1790_09215583
Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
RoHS: Compliant
0
  • 2500:$0.6136
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4501In Stock
  • 1000:$0.5389
  • 500:$0.6826
  • 100:$0.8263
  • 10:$1.0600
  • 1:$1.1900
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4501In Stock
  • 1000:$0.5389
  • 500:$0.6826
  • 100:$0.8263
  • 10:$1.0600
  • 1:$1.1900
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 12500:$0.4465
  • 5000:$0.4639
  • 2500:$0.4883
SI4686DY-T1-E3
DISTI # 25789852
Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
RoHS: Compliant
375
  • 12:$1.2997
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4686DY-T1-E3
    DISTI # SI4686DY-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.2629
    • 15000:€0.2829
    • 10000:€0.3059
    • 5000:€0.3559
    • 2500:€0.5219
    SI4686DY-T1-E3
    DISTI # SI4686DY-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.4769
    • 15000:$0.4899
    • 10000:$0.5039
    • 5000:$0.5249
    • 2500:$0.5409
    SI4686DY-T1-E3
    DISTI # 75M5494
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 10000:$0.5720
    • 6000:$0.5850
    • 4000:$0.6080
    • 2000:$0.6750
    • 1000:$0.7430
    • 1:$0.7740
    SI4686DY-T1-E3
    DISTI # 69W7202
    Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 18.2A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 500:$0.8170
    • 250:$0.8840
    • 100:$0.9500
    • 50:$1.0400
    • 25:$1.1400
    • 10:$1.2300
    • 1:$1.4900
    SI4686DY-T1-E3
    DISTI # 781-SI4686DY-T1-E3
    Vishay IntertechnologiesMOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
    RoHS: Compliant
    4290
    • 1:$1.4800
    • 10:$1.2200
    • 100:$0.9410
    • 500:$0.8090
    SI4686DY-T1-E3VISHAY INTERTECHNOLOGIES 604
    • 281:$0.6198
    • 51:$0.7152
    • 1:$2.3840
    SI4686DY-T1-E3
    DISTI # 2335317
    Vishay IntertechnologiesMOSFET, N CH, 30V, 18.2A, SOIC
    RoHS: Compliant
    307
    • 250:£0.3580
    • 100:£0.3730
    • 25:£0.3870
    • 5:£0.4020
    SI4686DY-T1-E3Vishay IntertechnologiesMOSFET 30V 18.2A 5.2W 9.5mohm @ 10VAmericas -
      Сурет Бөлім № Сипаттама
      SI4686DY-T1-E3

      Mfr.#: SI4686DY-T1-E3

      OMO.#: OMO-SI4686DY-T1-E3

      MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
      SI4686DY-T1-GE3

      Mfr.#: SI4686DY-T1-GE3

      OMO.#: OMO-SI4686DY-T1-GE3

      MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
      SI4686DY

      Mfr.#: SI4686DY

      OMO.#: OMO-SI4686DY-1190

      Жаңа және түпнұсқа
      SI4686DY-T1

      Mfr.#: SI4686DY-T1

      OMO.#: OMO-SI4686DY-T1-1190

      Жаңа және түпнұсқа
      SI4686DY-T1-E3

      Mfr.#: SI4686DY-T1-E3

      OMO.#: OMO-SI4686DY-T1-E3-VISHAY

      MOSFET N-CH 30V 18.2A 8-SOIC
      SI4686DY-T1-GE3

      Mfr.#: SI4686DY-T1-GE3

      OMO.#: OMO-SI4686DY-T1-GE3-VISHAY

      MOSFET N-CH 30V 18.2A 8-SOIC
      SI4686DY-TI-E3

      Mfr.#: SI4686DY-TI-E3

      OMO.#: OMO-SI4686DY-TI-E3-1190

      Жаңа және түпнұсқа
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1987
      Саны енгізіңіз:
      SI4686DY-T1-E3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      1,48 $
      1,48 $
      10
      1,22 $
      12,20 $
      100
      0,94 $
      94,10 $
      500
      0,81 $
      404,50 $
      -ден бастаңыз
      Ең жаңа өнімдер
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